STB200N4F3 STMicroelectronics, STB200N4F3 Datasheet - Page 11
![MOSFET N-CH 40V 120A D2PAK](/photos/19/8/190892/ge3dpak05-40_sml.jpg)
STB200N4F3
Manufacturer Part Number
STB200N4F3
Description
MOSFET N-CH 40V 120A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP200N4F3.pdf
(14 pages)
Specifications of STB200N4F3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
75nC @ 10V
Input Capacitance (ciss) @ Vds
5100pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
2.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0031 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB200N4F3
Manufacturer:
ST
Quantity:
12 500
STB200N4F3, STP200N4F3
Dim
L20
L30
D1
H1
b1
e1
L1
J1
D
Q
A
b
E
e
F
L
c
P
15.25
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
Doc ID 13302 Rev 3
TO-220 mechanical data
16.40
28.90
1.27
mm
Typ
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.173
0.024
0.044
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
Min
0.6
Package mechanical data
0.050
0.645
1.137
inch
Typ
0.181
0.034
0.066
0.027
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
Max
0.62
11/14