STB200N4F3 STMicroelectronics, STB200N4F3 Datasheet - Page 3

• Manufacturer Part Number: STB200N4F3
• Description: MOSFET N-CH 40V 120A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB200N4F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 2.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0031 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB200N4F3, STP200N4F3
1
Electrical ratings
Table 2.
1. Current limited by package
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, I
4. I
Table 3.
1. When mounted on FR-4 board, 1inch² 2 oz. Cu.
R
Symbol
Symbol
thJ-PCB
dv/dt
E
I
R
R
SD
DM
P
I
I
V
V
AS
T
D
D
T
thJC
thJA
TOT
GS
DS
stg
(1)
(1)
≤ 60A, di/dt ≤ 440 A/µs, V
J
(2)
(3)
(4)
(1)
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Thermal resistance junction-ambient max
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
D
= 60A, V
DD
DD
≤ V
= 25V
Parameter
Parameter
(BR)DSS
Doc ID 13302 Rev 3
C
= 25 °C
, T
j
≤ T
C
C
JMAX.
= 25 °C
= 100 °C
TO-220
62.5
-55 to 175
Value
Value
0.50
±20
120
120
480
300
862
2.0
4.2
40
Electrical ratings
D²PAK
35
W/°C
°C/W
°C/W
°C/W
Unit
V/ns
Unit
mJ
°C
W
V
V
A
A
A
3/14