STP11NM50N STMicroelectronics, STP11NM50N Datasheet - Page 12

• Manufacturer Part Number: STP11NM50N
• Description: MOSFET N-CH 500V 9A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP11NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 470 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 547pF @ 50V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.47 Ohm
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 6 A, 9 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10576-5

Package mechanical data
12/16
DIM.
D1
A1
A2
E1
V2
b4
c2
e1
L1
L2
L4
D
H
R
A
E
b
c
e
L
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0
1
o
TO-252 (DPAK) mechanical data
Doc ID 17156 Rev 3
STD11NM50N, STF11NM50N, STP11NM50N
mm.
5.10
4.70
2.28
2.80
0.80
0.20
typ
0068772_G
10.10
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8
1
o