STP11NM50N STMicroelectronics, STP11NM50N Datasheet - Page 3

MOSFET N-CH 500V 9A TO-220

STP11NM50N

Manufacturer Part Number
STP11NM50N
Description
MOSFET N-CH 500V 9A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheets

Specifications of STP11NM50N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
470 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
547pF @ 50V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.47 Ohm
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
6 A, 9 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
19 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10576-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP11NM50N
Manufacturer:
STMicroelectronics
Quantity:
1 600
Part Number:
STP11NM50N
Manufacturer:
ST
0
Part Number:
STP11NM50N������
Manufacturer:
ST
0
STD11NM50N, STF11NM50N, STP11NM50N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
1. Pulse width limited by T
2. Starting T
Symbol
Symbol
Symbol
R
dv/dt
R
R
I
DM
P
V
thj-case
thj-amb
V
V
thj-pcb
E
T
SD
I
I
I
TOT
T
T
AR
ISO
GS
DS
stg
D
D
AS
l
j
(2)
(3)
≤ 8.5 A, di/dt ≤ 400 A/µs, V
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Avalanche current, repetetive or not repetetive
Single pulse avalanche energy
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal data
C
D
= 25 °C)
= I
JMAX.
AR
, V
Parameter
Parameter
DD
Parameter
C
= 50 V.
Doc ID 17156 Rev 3
= 25 °C
Peak
GS
< V
= 0)
(BR)DSS
C
C
(2)
= 25 °C
= 100 °C
,V
(1)
DD
= 80% V
(1)
TO-220
TO-220
(BR)DSS
62.5
300
70
1.79
8.5
34
6
- 55 to 150
DPAK
DPAK
Value
Value
± 25
500
150
70
50
Value
15
150
3
Electrical ratings
TO-220FP
TO-220FP
8.5
2500
62.5
6
34
300
25
5
(1)
(1)
(1)
Unit
°C/W
°C/W
°C/W
V/ns
Unit
mJ
Unit
A
°C
°C
°C
W
V
V
A
A
A
V
3/16

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