STW18NM60N STMicroelectronics, STW18NM60N Datasheet - Page 3

• Manufacturer Part Number: STW18NM60N
• Description: MOSFET N-CH 600V 13A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW18NM60N

• Package / Case: TO-247
• Mounting Type: Through Hole
• Power - Max: 110W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 13A
• Drain To Source Voltage (vdss): 600V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 285 mOhm @ 6.5A, 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Symbol
R
R
Symbol
dv/dt
I
thj-case
thj-amb
DM
P
V
V
E
T
SD
I
T
T
I
I
TOT
AR
ISO
GS
stg
AS
D
D
l
J
(2)
(3)
≤ 13 A, di/dt ≤ 400 A/µs, peak V
Thermal resistance junction-case max
Thermal resistance junction-amb max
Maximum lead temperature for
soldering purpose
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
C
=25 °C)
J
= 25 °C, I
Parameter
Parameter
C
Doc ID 15868 Rev 1
D
= 25 °C
= I
J
max)
AR
DS
, V
≤ V
C
C
DD
(BR)DSS
= 25 °C
= 100 °C
= 50 V)
D²PAK TO-220 TO-247 TO-220FP
TO-220,TO-247
62.5
1.56
D²PAK,
8.2
13
52
80
300
-55 to 150
Value
50
TBD
TBD
600
15
TO-220FP
Electrical ratings
8.2
13
52
2500
4.17
62.5
30
(1)
(1)
(1)
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
°C
W
V
A
A
A
A
V
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