STW18NM60N STMicroelectronics, STW18NM60N Datasheet - Page 5

• Manufacturer Part Number: STW18NM60N
• Description: MOSFET N-CH 600V 13A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW18NM60N

• Package / Case: TO-247
• Mounting Type: Through Hole
• Power - Max: 110W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 13A
• Drain To Source Voltage (vdss): 600V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 285 mOhm @ 6.5A, 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
I
SDM
V
t
t
I
I
d(on)
d(off)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
RRM
RRM
SD
I
Q
Q
SD
t
t
t
t
r
rr
rr
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15868 Rev 1
I
I
V
(see Figure 4)
V
di/dt =100 A/µs, I
Tj = 150°C
V
R
(see Figure 2)
SD
SD
DD
DD
DD
G
=13 A, di/dt =100 A/µs,
= 13 A, V
= 4.7 Ω, V
= 60 V
= 60 V
= 300 V, I
Test conditions
Test conditions
(see Figure 4)
GS
GS
D
=0
= 13 A,
SD
= 10 V
= 13 A
Electrical characteristics
Min.
Min. Typ. Max. Unit
-
-
-
-
-
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Max.
TBD
13
52
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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