STW13NK100Z STMicroelectronics, STW13NK100Z Datasheet

MOSFET N-CH 1KV 13A TO-247

STW13NK100Z

Manufacturer Part Number
STW13NK100Z
Description
MOSFET N-CH 1KV 13A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STW13NK100Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
700 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4.5V @ 150µA
Gate Charge (qg) @ Vgs
266nC @ 10V
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
350W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohm @ 10 V
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
13 A
Power Dissipation
350000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3556-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STW13NK100Z
Manufacturer:
FSC
Quantity:
9 000
Part Number:
STW13NK100Z
Manufacturer:
ST
0
Part Number:
STW13NK100Z
Manufacturer:
ST
Quantity:
200
Part Number:
STW13NK100Z
Manufacturer:
ST
Quantity:
20 000
Order codes
General features
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
August 2006
STW13NK100Z
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Switching application
Type
STW13NK100Z
Part number
(@Tjmax)
1000 V
V
DSS
Zener - Protected SuperMESH™ PowerMOSFET
< 0.70 Ω 13 A 350W
R
DS(on)
W13NK100Z
Marking
I
D
N-channel 1000V - 0.56Ω - 13A - TO-247
P
W
Rev 5
Internal schematic diagram
Package
TO-247
STW11NK100Z
STW13NK100Z
TO-247
Packaging
Tube
www.st.com
1/14
14

Related parts for STW13NK100Z

STW13NK100Z Summary of contents

Page 1

... MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number STW13NK100Z August 2006 N-channel 1000V - 0.56Ω - 13A - TO-247 I P DS(on Internal schematic diagram Marking W13NK100Z Rev 5 STW11NK100Z STW13NK100Z TO-247 Package Packaging TO-247 Tube 1/14 www.st.com 14 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ STW13NK100Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ...

Page 3

... STW13NK100Z 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1,5KΩ) ESD (G-S) (2) dv/dt Peak diode recovery voltage slope ...

Page 4

... In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/14 Parameter Test conditions STW13NK100Z Min. Typ. Max. Unit 30 ...

Page 5

... STW13NK100Z 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( Gate threshold voltage GS(th) Static drain-source on R DS(on) resistance Table 6. Dynamic Symbol (1) g Forward transconductance V ...

Page 6

... Pulsed: pulse duration=300µs, duty cycle 1.5% 6/14 Parameter Test conditions I =8.3A = di/dt = 100A/µs, V =100 V, Tj=25°C DD (see Figure I = di/dt = 100A/µs, V =100V, Tj=150°C DD (see Figure STW13NK100Z Min Typ. Max 1.6 GS 820 12.7 31 18) 1050 17.8 34 18) Unit µ µ ...

Page 7

... STW13NK100Z 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Electrical characteristics Figure 2. Thermal impedance Figure 4. Transfer characteristics 7/14 ...

Page 8

... Electrical characteristics Figure 5. Transconductance Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature 8/14 Figure 6. Static drain-source on resistance Capacitance variations Figure 10. Normalized on resistance vs temperature STW13NK100Z ...

Page 9

... STW13NK100Z Figure 11. Source-drain diode forward characteristics Figure 13. Maximum avalanche energy vs temperature Electrical characteristics Figure 12. Normalized B VDSS vs temperature 9/14 ...

Page 10

... Test circuit 3 Test circuit Figure 14. Unclamped Inductive load test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load switching and diode recovery times 10/14 Figure 15. Unclamped Inductive waveform Figure 17. Gate charge test circuit STW13NK100Z ...

Page 11

... STW13NK100Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 12

... STW13NK100Z inch MIN. TYP. MAX. 0.19 0.20 0.086 0.102 0.039 0.055 0.079 0.094 0.118 0.134 0.015 0.03 0.781 0.793 0.608 0.620 ...

Page 13

... STW13NK100Z 5 Revision history Table 8. Revision history Date 22-Jun-2004 09-Sep-2004 28-Jan-2005 18-Sep-2005 01-Aug-2006 Revision 1 Target document 2 Preliminary document 3 Complete version with curves 4 Figure 12 changed 5 New template, no content change Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STW13NK100Z ...

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