STW13NK100Z STMicroelectronics, STW13NK100Z Datasheet - Page 5

MOSFET N-CH 1KV 13A TO-247

STW13NK100Z

Manufacturer Part Number
STW13NK100Z
Description
MOSFET N-CH 1KV 13A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STW13NK100Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
700 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4.5V @ 150µA
Gate Charge (qg) @ Vgs
266nC @ 10V
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
350W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohm @ 10 V
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
13 A
Power Dissipation
350000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3556-5

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STW13NK100Z
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
osseq
(BR)DSS
g
t
t
increases from 0 to 80% V
I
C
I
C
DS(on)
C
Q
GS(th)
d(on)
d(off)
Q
GSS
DSS
fs
Q
oss eq.
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
(2)
=25°C unless otherwise specified)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
GS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
V
V
R
(see
V
V
I
V
V
Tc = 125°C
V
V
V
D
DS
DS
GS
DD
DD
GS
DS
DS
GS
DS
GS
G
= 1mA, V
=4.7Ω, V
=0, V
=500 V, I
=800V, I
=15V, I
=25V, f=1 MHz, V
=10V
= Max rating,
= Max rating,
= ± 20V
= V
= 10V, I
Figure
Test conditions
Test conditions
GS
DS
, I
D
GS
16)
D
D
D
=0V to 800V
GS
D
= 6.5 A
= 13A
= 150 µA
= 6.5 A
= 7A,
= 0
=10V
GS
=0
1000
Min.
Min.
Electrical characteristics
3
6000
Typ.
Typ.
3.75
0.56
455
100
227
145
190
100
14
45
35
45
30
oss
Max.
Max.
0.70
266
±
4.5
when V
10
10
1
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
V
V
S
5/14

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