IRFB4310PBF International Rectifier, IRFB4310PBF Datasheet - Page 2

• Manufacturer Part Number: IRFB4310PBF
• Description: MOSFET N-CH 100V 130A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4310PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 7670pF @ 50V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 130 A
• Gate Charge, Total: 170 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 300 W
• Resistance, Drain To Source On: 5.6 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 68 ns
• Time, Turn-on Delay: 26 ns
• Transconductance, Forward: 160 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 140 A
• Mounting Style: Through Hole
• Gate Charge Qg: 170 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB4310PBF

Notes:

‚
ƒ
„
…
Static @ T
V
∆V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G
g
gs
gd
iss
oss
rss
oss
oss
rr
temperature. Package limitation current is 75A
above this value.
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
I
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
R
SD
Symbol
Symbol
Symbol
(BR)DSS
G
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
≤ 75A, di/dt ≤ 550A/µs, V
= 25Ω, I
/∆T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 75A, V
= 25°C (unless otherwise specified)
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.35mH
DD
Ãd
≤ V
Parameter
Parameter
(BR)DSS
, T
J
≤ 175°C.
h
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
†
‡
ˆ
‰
100
––– 0.064 –––
–––
–––
–––
–––
–––
–––
160
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 720.1 –––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
R
C
as C
C
footprint and soldering techniques refer to application note #AN-994.
oss
θ
oss
oss
is measured at T
7670
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
–––
–––
–––
–––
–––
–––
–––
170
110
540
280
650
––– 130
–––
–––
120
5.6
1.4
3.3
46
62
26
68
78
45
55
82
while V
DS
-200
–––
250
200
–––
–––
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
550
120
180
–––
7.0
4.0
1.3
20
68
83
DS
is rising from 0 to 80% V
™
is rising from 0 to 80% V
J
V/°C
mΩ
approximately 90°C.
µA
nA
nC
pF
nC T
ns
ns
V
V
Ω
S
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
f = 1MHz, open drain
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 75A
= 75A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 2.6Ω
= V
= 100V, V
= 100V, V
= 50V, I
= 80V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 65V
= 10V
= 0V
= 0V, V
= 0V, V
GS
, I
D
g
g
DSS
D
DS
DS
S
D
D
= 250µA
= 75A, V
= 250µA
DSS
= 75A
= 75A
.
GS
GS
= 0V to 80V
= 0V to 80V
Conditions
Conditions
Conditions
.
= 0V
= 0V, T
V
I
di/dt = 100A/µs
F
R
= 75A
g
D
= 85V,
GS
= 1mA
J
= 0V
= 125°C
j
h
www.irf.com
d
, See Fig.11
, See Fig. 5
g
G
g
S
D