IRFB4310PBF International Rectifier, IRFB4310PBF Datasheet - Page 3
![MOSFET N-CH 100V 130A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB4310PBF
Manufacturer Part Number
IRFB4310PBF
Description
MOSFET N-CH 100V 130A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFB4310PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
130A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
250nC @ 10V
Input Capacitance (ciss) @ Vds
7670pF @ 50V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
130 A
Gate Charge, Total
170 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
300 W
Resistance, Drain To Source On
5.6 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
68 ns
Time, Turn-on Delay
26 ns
Transconductance, Forward
160 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
140 A
Mounting Style
Through Hole
Gate Charge Qg
170 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFB4310PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFB4310PBF
Manufacturer:
IR
Quantity:
35 000
Part Number:
IRFB4310PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
12000
10000
8000
6000
4000
2000
1000
1000
100
100
10
10
0
1
1
Fig 3. Typical Transfer Characteristics
0.1
3.0
1
Fig 1. Typical Output Characteristics
T J = 175°C
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4.0
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1
Ciss
5.0
Coss
Crss
V DS = 50V
≤ 60µs PULSE WIDTH
T J = 25°C
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
6.0
10
7.0
100
8.0
100
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
20
16
12
10
8
4
0
-60 -40 -20 0
0.1
0
Fig 2. Typical Output Characteristics
I D = 75A
TOP
BOTTOM
I D = 75A
V GS = 10V
40
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
80
V DS = 80V
VDS= 50V
VDS= 20V
1
20 40 60 80 100 120 140 160 180
4.5V
120
≤ 60µs PULSE WIDTH
Tj = 175°C
160
10
200
240
280
100
3