IRFS3006-7PPBF International Rectifier, IRFS3006-7PPBF Datasheet - Page 2

• Manufacturer Part Number: IRFS3006-7PPBF
• Description: MOSFET N-CH 60V 240A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS3006-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 168A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 240A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 8850pF @ 50V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 293 A
• Power Dissipation: 375 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

∆V
Notes:

‚
ƒ
„
Static @ T
V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G(int)
iss
oss
rss
oss
oss
some lead mounting arrangements.
g
gs
gd
sync
rr
limitation arising from heating of the device leds may occur with
Calcuted continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
2
Symbol
Symbol
Symbol
temperature.
I
(BR)DSS
temperature Bond wire current limit is 240A. Note that current
R
SD
above this value .
G
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
≤ 168A, di/dt ≤ 1410 A/µs, V
= 25Ω, I
/∆T
J
AS
J
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 168A, V
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
J
=10V. Part not recommended for use
= 25°C, L = 0.021mH
Ãd
DD
≤ V
Parameter
Parameter
(BR)DSS
, T
g
- Q
J
≤ 175°C.
gd
)
h
Ã
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
290
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
…
†
‡
ˆ
‰
Š
60
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For
C
as C
C
note # AN-994 echniques refer to application note #AN-994.
recommended footprint and soldering techniquea refer to applocation
θJC
oss
θ
oss
oss
8850
1007
1460
1915
0.07
2.03
–––
–––
–––
–––
–––
–––
–––
200
140
118
525
–––
–––
–––
1.5
eff. (TR) is a fixed capacitance that gives the same charging time
oss
2.1
eff. (ER) is a fixed capacitance that gives the same energy as
while V
37
60
14
61
69
44
48
51
62
while V
293
1172
-100
DS
–––
–––
250
100
–––
–––
300
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.1
4.0
1.3
20
is rising from 0 to 80% V
DS
™
is rising from 0 to 80% V
V/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
V
V
Ω
S
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz (See Fig 5)
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 168A
= 168A, V
= 168A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 2.7Ω
= V
= 60V, V
= 60V, V
= 25V, I
= 30V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 39V
= 10V
= 0V
= 0V, V
= 0V, V
GS
, I
D
g
g
S
D
DS
DS
DSS
D
D
DS
= 250µA
GS
GS
= 168A, V
= 250µA
= 168A
= 168A
= 0V to 48V
= 0V to 48V
Conditions
Conditions
Conditions
DSS
.
=0V, V
= 0V
= 0V, T
V
I
di/dt = 100A/µs
.
F
R
= 168A
D
= 51V,
g
GS
= 5mA
J
GS
= 125°C
= 10V
= 0V
h
www.irf.com
G
d
(See Fig 11)
g
g
S
D