IRFS3006-7PPBF International Rectifier, IRFS3006-7PPBF Datasheet - Page 6

• Manufacturer Part Number: IRFS3006-7PPBF
• Description: MOSFET N-CH 60V 240A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS3006-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 168A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 240A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 8850pF @ 50V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 293 A
• Power Dissipation: 375 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
20
16
12
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Fig 16. Threshold Voltage vs. Temperature
8
4
0
-75 -50 -25
0
I F = 168A
V R = 51V
T J = 25°C
T J = 125°C
200
T J , Temperature ( °C )
400
0
di F /dt (A/µs)
25 50 75 100 125 150 175
600
800
I D = 250µA
I D = 1.0mA
I D = 1.0A
600
500
400
300
200
100
1000
0
0
1200
I F = 168A
V R = 51V
T J = 25°C
T J = 125°C
f
200
400
di F /dt (A/µs)
600
800
600
500
400
300
200
100
1000
20
16
12
0
8
4
0
f
0
0
I F = 112A
V R = 51V
T J = 25°C
T J = 125°C
I F = 112A
V R = 51V
T J = 25°C
T J = 125°C
1200
200
200
400
400
di F /dt (A/µs)
di F /dt (A/µs)
600
600
800
800
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1000
1000
f
1200
1200
f