IRF1324S-7PPBF International Rectifier, IRF1324S-7PPBF Datasheet - Page 2
![MOSFET N-CH 24V 429A D2PAK-7](/photos/5/50/55043/21-d2pak-7_sml.jpg)
IRF1324S-7PPBF
Manufacturer Part Number
IRF1324S-7PPBF
Description
MOSFET N-CH 24V 429A D2PAK-7
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet
1.IRF1324STRL-7PP.pdf
(9 pages)
Specifications of IRF1324S-7PPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 mOhm @ 160A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
429A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
252nC @ 10V
Input Capacitance (ciss) @ Vds
7700pF @ 19V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (6 leads + tab)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.001Ohm
Drain-source On-volt
24V
Gate-source Voltage (max)
±20V
Drain Current (max)
429A
Power Dissipation
300W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6 +Tab
Package Type
D2PAK
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
24 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
429 A
Mounting Style
SMD/SMT
Gate Charge Qg
180 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1324S-7PPBF
Manufacturer:
IR
Quantity:
20 000
∆V
Notes:
Static @ T
V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
sync
rr
above this value.
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
temperature.
2
Symbol
Symbol
Symbol
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
http://www.irf.com/technical-info/appnotes/an-1140.pdf
R
(BR)DSS
temperature. Package limitation current is 240A. Note that current
G
eff. (ER) Effective Output Capacitance (Energy Related) –––
eff. (TR) Effective Output Capacitance (Time Related)
= 25Ω, I
/∆T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 160A, V
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
J
=10V. Part not recommended for use
= 25°C, L = 0.018mH
Ãd
Parameter
Parameter
g
- Q
gd
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.023 –––
–––
–––
270
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
24
mended footprint and soldering techniques refer to application note #AN-994.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
I
C
as C
C
SD
oss
θ
oss
oss
7700
3380
1930
4780
4970
0.80
≤ 160A, di/dt ≤ 600A/µs, V
–––
–––
–––
–––
–––
–––
–––
180
122
240
––– 429
–––
–––
3.0
2.0
47
58
19
86
93
71
74
83
92
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
while V
1636
-200
–––
250
200
–––
–––
252
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
107
110
120
140
–––
1.0
4.0
1.3
20
DS
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
V/°C
mΩ
µA
nA
nC
pF
nC
ns
ns
Ω
V
V
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig.5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
J
J
J
J
J
J
G
= 75A
= 75A, V
= 160A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
DD
=2.7Ω
= V
= 24V, V
= 19V, V
= 50V, I
=12V
= 19V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 16V
= 10V
= 0V
= 0V, V
= 0V, V
≤ V
GS
(BR)DSS
, I
D
g
g
DS
S
D
DS
DS
D
DSS
D
= 250µA
GS
GS
= 160A, V
= 250µA
= 160A
=0V, V
= 160A
= 0V to 19V
= 0V to 19V
DSS
, T
.
Conditions
Conditions
Conditions
= 0V
= 0V, T
V
I
di/dt = 100A/µs
J
.
F
≤ 175°C.
R
= 160A
D
GS
= 20V,
g
= 5mA
J
GS
= 10V
= 125°C
= 0V
i
d
, See Fig.11
Ã
www.irf.com
g
g
G
g
D
S