IRF1324S-7PPBF International Rectifier, IRF1324S-7PPBF Datasheet - Page 2

• Manufacturer Part Number: IRF1324S-7PPBF
• Description: MOSFET N-CH 24V 429A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF1324S-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 mOhm @ 160A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 429A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 252nC @ 10V
• Input Capacitance (ciss) @ Vds: 7700pF @ 19V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.001Ohm
• Drain-source On-volt: 24V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 429A
• Power Dissipation: 300W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6 +Tab
• Package Type: D2PAK
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 24 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 429 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

∆V
Notes:

‚
ƒ
Static @ T
V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
sync
rr
above this value.
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
temperature.
2
Symbol
Symbol
Symbol
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
http://www.irf.com/technical-info/appnotes/an-1140.pdf
R
(BR)DSS
temperature. Package limitation current is 240A. Note that current
G
eff. (ER) Effective Output Capacitance (Energy Related) –––
eff. (TR) Effective Output Capacitance (Time Related)
= 25Ω, I
/∆T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 160A, V
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
J
=10V. Part not recommended for use
= 25°C, L = 0.018mH
Ãd
Parameter
Parameter
g
- Q
gd
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.023 –––
–––
–––
270
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
24
„
…
†
‡
ˆ
‰
mended footprint and soldering techniques refer to application note #AN-994.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
I
C
as C
C
SD
oss
θ
oss
oss
7700
3380
1930
4780
4970
0.80
≤ 160A, di/dt ≤ 600A/µs, V
–––
–––
–––
–––
–––
–––
–––
180
122
240
––– 429
–––
–––
3.0
2.0
47
58
19
86
93
71
74
83
92
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
while V
1636
-200
–––
250
200
–––
–––
252
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
107
110
120
140
–––
1.0
4.0
1.3
20
DS
™
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
V/°C
mΩ
µA
nA
nC
pF
nC
ns
ns
Ω
V
V
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig.5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
J
J
J
J
J
J
G
= 75A
= 75A, V
= 160A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
DD
=2.7Ω
= V
= 24V, V
= 19V, V
= 50V, I
=12V
= 19V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 16V
= 10V
= 0V
= 0V, V
= 0V, V
≤ V
GS
(BR)DSS
, I
D
g
g
DS
S
D
DS
DS
D
DSS
D
= 250µA
GS
GS
= 160A, V
= 250µA
= 160A
=0V, V
= 160A
= 0V to 19V
= 0V to 19V
DSS
, T
.
Conditions
Conditions
Conditions
= 0V
= 0V, T
V
I
di/dt = 100A/µs
J
.
F
≤ 175°C.
R
= 160A
D
GS
= 20V,
g
= 5mA
J
GS
= 10V
= 125°C
= 0V
i
d
, See Fig.11
Ã
www.irf.com
g
g
G
g
D
S