IXKC20N60C IXYS, IXKC20N60C Datasheet - Page 2

• Manufacturer Part Number: IXKC20N60C
• Description: MOSFET N-CH 600V 15A ISOPLUS220
• Manufacturer: IXYS
• Series: CoolMOS™r

Specifications of IXKC20N60C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 190 mOhms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 87 nC
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 15
• Rds(on), Max, Tj=25°c, (?): 0.190
• Ciss, Typ, (pf): 2400
• Qg, Typ, (nc): 87
• Trr, Max, (ns): 800
• Trr, Typ, (ns): 500
• Pd, (w): 125
• Rthjc, Max, (k/w): 1.00
• Visol, Rms, (v): 2500
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / Rohs Status: Details

IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
Source-Drain Diode
Symbol
I
V
t
Q
I
Component
Symbol
T
T
V
F
Symbol
R
Weight
S
RM
rr
SD
VJ
stg
C
ISOL
RM
thCH
Conditions
V
I
I
Conditions
operating
storage
RMS leads-to-tab, 50/60 Hz, f = 1 minute
mounting force
Conditions
with heatsink compound
F
F
GS
= 16 A; V
= 20 A; -di
= 0 V
GS
F
/dt = 100 A/µs; V
= 0 V
R
(T
= 480 V
VJ
= 25°C, unless otherwise specifi ed)
min.
min.
Characteristic Values
Characteristic Values
11-65 / 2.4-11
Maximum Ratings
typ.
typ.
500
0.9
0.3
2.7
11
70
-55...+150
-55...+150
max.
2500
max.
800
1.2
20
K/W
N/lb
µC
V~
°C
°C
ns
A
V
A
g
IXKC 20N60C
20080523a
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