IXKC20N60C IXYS, IXKC20N60C Datasheet - Page 4

• Manufacturer Part Number: IXKC20N60C
• Description: MOSFET N-CH 600V 15A ISOPLUS220
• Manufacturer: IXYS
• Series: CoolMOS™r

Specifications of IXKC20N60C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 190 mOhms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 87 nC
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 15
• Rds(on), Max, Tj=25°c, (?): 0.190
• Ciss, Typ, (pf): 2400
• Qg, Typ, (nc): 87
• Trr, Max, (ns): 800
• Trr, Typ, (ns): 500
• Pd, (w): 125
• Rthjc, Max, (k/w): 1.00
• Visol, Rms, (v): 2500
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / Rohs Status: Details

IXYS reserves the right to change limits, test conditions and dimensions.
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700
650
1.4
1.0
Fig. 4
Fig. 7 Forward characteristic
Fig. 10 Avalanche energy
Typ. drain-source on-state
resistance
of reverse diode
I
V
T
D
I
J
SD
D
[A]
[°C]
= 10 A
[V]
T
J
= 150°C
140
35
V
4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
20 V
GS
=
700
1.0
14
Fig. 5 Drain-source on-state resistance
Fig. 8
Fig. 11 Drain-source breakdown voltage
I
D
= 20.7 A pulsed
V
V
DS max
DS max
I
V
D
GS
= 13.1 A
Typ. gate charge
= 10 V
I
D
= 0.25 mA
T
T
J
Q
J
[°C]
G
[°C]
[nC]
140
140
120
70
Fig. 6 Typ. transfer characteristics
Fig. 9 Typ. capacitances
V
DS
V
> 2x I
GS
= 0 V, f = 1 MHz
IXKC 20N60C
D
x R
DS(on)max
V
V
DS
GS
[V]
[V]
500
20080523a
8
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