IRFP90N20DPBF International Rectifier, IRFP90N20DPBF Datasheet - Page 2

• Manufacturer Part Number: IRFP90N20DPBF
• Description: MOSFET N-CH 200V 94A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP90N20DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 56A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 94A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 6040pF @ 25V
• Power - Max: 580W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Channel Type: N
• Current, Drain: 94 A
• Gate Charge, Total: 180 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 580 W
• Resistance, Drain To Source On: 0.023 Ohm
• Resistance, Thermal, Junction To Case: 0.26 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 43 ns
• Time, Turn-on Delay: 23 ns
• Transconductance, Forward: 39 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 94 A
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFP90N20DPBF

IRFP90N20DPbF
Dynamic @ T
Avalanche Characteristics
Diode Characteristics
Static @ T
I
E
I
E
V
∆V
R
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
GSS
AR
DSS
d(on)
r
d(off)
f
SM
S
rr
on
fs
2
AS
AR
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
eff.
/∆T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
Min. Typ. Max. Units
39
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
6040 –––
1070 –––
8350 –––
0.24 –––
–––
––– 0.023
–––
–––
–––
–––
––– -100
–––
180
160
170
420
870
–––
–––
–––
230
1.9
45
87
23
43
79
94
380
–––
250
100
–––
130
–––
–––
–––
–––
–––
–––
–––
340
5.0
1.5
2.8
25
270
67
o
V/°C
µA
nA
nC
ns
pF
µC
ns
V
Ω
V
S
V
Typ.
–––
–––
–––
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
D
I
GS
GS
DS
DS
DS
GS
GS
DS
D
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
J
J
= 56A
= 25°C, I
= 25°C, I
= 56A
= 1.2Ω
= V
= 200V, V
= 160V, V
= 50V, I
= 160V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V, „
= 100V
= 10V „
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 56A
= 56A, V
= 250µA
= 56A
= 56A
GS
GS
= 0V to 160V …
Max.
1010
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
56
58
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
„
J
= 0V „
G
= 150°C
Units
S
+L
mJ
mJ
A
D
S
D
)