IRFP90N20DPBF International Rectifier, IRFP90N20DPBF Datasheet - Page 4

• Manufacturer Part Number: IRFP90N20DPBF
• Description: MOSFET N-CH 200V 94A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP90N20DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 56A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 94A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 6040pF @ 25V
• Power - Max: 580W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Channel Type: N
• Current, Drain: 94 A
• Gate Charge, Total: 180 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 580 W
• Resistance, Drain To Source On: 0.023 Ohm
• Resistance, Thermal, Junction To Case: 0.26 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 43 ns
• Time, Turn-on Delay: 23 ns
• Transconductance, Forward: 39 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±30 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 94 A
• Mounting Style: Through Hole
• Gate Charge Qg: 180 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFP90N20DPBF

IRFP90N20DPbF
1000000
100000
1000.00
4
10000
100.00
1000
10.00
100
1.00
0.10
10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.0
Drain-to-Source Voltage
T J = 175°C
V DS , Drain-to-Source Voltage (V)
0.5
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
1.0
Ciss
Coss
Crss
T J = 25°C
1.5
f = 1 MHZ
2.0
100
V GS = 0V
2.5
SHORTED
3.0
1000
10000
1000
100
0.1
10
Fig 8. Maximum Safe Operating Area
1
12
10
7
5
2
0
0
1
Fig 6. Typical Gate Charge vs.
I
D
Tc = 25°C
Tj = 175°C
Single Pulse
=
56A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
40
Q , Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
G
10
80
V
V
V
DS
DS
DS
120
= 160V
= 100V
= 40V
100
www.irf.com
160
10msec
100µsec
1msec
1000
200