IXTH36N50P IXYS, IXTH36N50P Datasheet
首页 Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTH36N50P
Manufacturer Part Number
IXTH36N50P
Description
MOSFET N-CH 500V 36A TO-247
Specifications of IXTH36N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
170 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
540W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.17 Ohms
Forward Transconductance Gfs (max / Min)
36 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
540 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
36
Rds(on), Max, Tj=25°c, (?)
0.17
Ciss, Typ, (pf)
4700
Qg, Typ, (nc)
82
Trr, Typ, (ns)
400
Pd, (w)
540
Rthjc, Max, (k/w)
0.23
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
V
V
I
I
R
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GS
GSM
AR
AS
D
SOLD
C
DSS
GS(th)
DS(on)
d
J
= 25° C unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque(TO-247)
Mounting force (PLUS220)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-268
TO-3P
TO-247
S
V
PLUS220
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 250 µA
, V
G
= 0.5 I
= 3 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
IXTH 36N50P
IXTQ 36N50P
IXTT 36N50P
IXTV 36N50P
IXTV 36N50PS
JM
,
500
Min.
20..120/4.5..15
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
500
500
±30
±40
108
540
150
300
260
1.5
5.5
36
36
50
10
6
5
2
±100
250
Max.
5.0
25
170 mΩ
V/ns
N/lb
mJ
nA
µA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
g
J
g
TO-3P (IXTQ)
TO-268 (IXTT)
PLUS220 SMD(IXTV..S)
G = Gate
S = Source
Features
l
l
l
TO-247 (IXTH)
PLUS220 (IXTV)
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
V
I
R
G
D25
G
DS(on)
DSS
D
D
G
S
S
G
S
≤ ≤ ≤ ≤ ≤ 170 mΩ Ω Ω Ω Ω
= 500
=
S
D = Drain
TAB = Drain
36
DS99228E(01/06)
D (TAB)
(TAB)
D (TAB)
D (TAB)
A
V
(TAB)
Related parts for IXTH36N50P
IXTH36N50P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 36 108 1.5 ≤ ...
... olts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 IXTH 36N50P IXTQ 36N50P IXTT 36N50P (T = 25° C unless otherwise specified 0 pulse test DS D D25 ...
... mperes D Fig. 7. Input Adm ittance 125º 25ºC 15 -40º 4 olts G S © 2006 IXYS All rights reserved IXTH 36N50P IXTQ 36N50P IXTT 36N50P º C 3.1 2.8 2.5 2.2 1.9 5.5V 1.6 1.3 5V 4.5V 0.7 0 125º 25º ...
... olts S D Fig. 11. Capacitance 10000 1000 100 f = 1MH olts D S 1.00 0.10 0.01 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXTH 36N50P IXTQ 36N50P IXTT 36N50P 25º 0.9 1 1.1 1.2 1000 100 C oss ...
... Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC PLUS220 (IXTV) Outline © 2006 IXYS All rights reserved IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS TO-3P (IXTQ) Outline PLUS220SMD (IXTV_S) Outline TO-268 (IXTT) Outline ...
Related keywords
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