IXTH36N50P IXYS, IXTH36N50P Datasheet - Page 3

• Manufacturer Part Number: IXTH36N50P
• Description: MOSFET N-CH 500V 36A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTH36N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Forward Transconductance Gfs (max / Min): 36 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 540 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 36
• Rds(on), Max, Tj=25°c, (?): 0.17
• Ciss, Typ, (pf): 4700
• Qg, Typ, (nc): 82
• Trr, Typ, (ns): 400
• Pd, (w): 540
• Rthjc, Max, (k/w): 0.23
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
3.4
2.6
2.2
1.8
1.4
0.6
55
50
45
40
35
30
25
20
15
10
36
32
28
24
20
16
12
5
0
8
4
0
3
1
4
0
0
V
T
I
GS
D
10
2
J
Fig. 3. Output Char acte r is tics
4.5
= 125ºC
Fig. 5. R
= 18A V alue vs . Dr ain Cur r e nt
= 10V
Fig. 7. Input Adm ittance
-40ºC
25ºC
20
4
5
V
DS(on)
V
I
30
GS
6
D
V
G S
@ 125
D S
- A mperes
= 10V
- V olts
7V
6V
5.5
Nor m alize d to
40
- V olts
8
º
T
C
J
5V
5.5V
4.5V
= 125ºC
50
10
6
T
J
= 25ºC
60
12
6.5
70
14
80
16
7
IXTH 36N50P IXTQ 36N50P IXTT 36N50P
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
40
35
30
25
20
15
10
70
60
50
40
30
20
10
1
5
0
0
-50
-50
0
T
Fig. 4. R
J
V
V alue vs . Junction Te m pe r atur e
IXT V36N50P IXTV 36N50PS
= -40ºC
GS
-25
-25
10
125ºC
Fig. 8. Tr ans conductance
25ºC
Fig. 6. Dr ain Cur r e nt vs . Cas e
= 10V
20
T
DS(on
0
0
T
C
J
- Degrees Centigrade
- Degrees Centigrade
30
Te m pe r atur e
)
25
25
I
Nor m alize d to I
D
I
D
- A mperes
40
= 36A
50
50
50
75
75
60
I
D
= 18A
100
100
D
70
= 18A
125
125
80
150
150
90