IXFT30N60P IXYS, IXFT30N60P Datasheet

MOSFET N-CH 600V 30A TO-268 D3

IXFT30N60P

Manufacturer Part Number
IXFT30N60P
Description
MOSFET N-CH 600V 30A TO-268 D3
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFT30N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
82nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
500W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
27 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
500000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.24
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
82
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFT30N60P
Manufacturer:
IXYS
Quantity:
15 500
PolarHV
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
F
Weight
© 2006 IXYS All rights reserved
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
C
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
TO-247
TO-268
PLUS220
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
D
= 4 mA
= 250 µA
= 0.5 I
G
DS
= 4 Ω
= 0
D25
(TO-247)
(PLUS220)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
IXFH 30N60P
IXFT 30N60P
IXFV 30N60P
IXFV 30N60PS
JM
,
600
Min.
2.5
11..65/2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
600
600
±30
±40
500
150
300
260
1.5
30
80
30
50
20
6
5
4
±100
250
240
Max.
5.0
25
N/lb.
V/ns
m Ω
mJ
nA
µA
µA
° C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
g
J
PLUS220 (IXFV)
PLUS220 SMD (IXFV...S)
TO-247 (IXFH)
TO-268 (IXFT)
Features
l
l
l
l
Fast Recovery diode
Unclamped Inductive Switching (UIS)
rated
International standard packages
Low package inductance
- easy to drive and to protect
V
I
R
t
D25
rr
G
DS(on)
DSS
G = Gate
S = Source
G
D
G
D
S
G
S
S
= 600
= 30
≤ ≤ ≤ ≤ ≤ 240 m Ω Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200
S
D (TAB)
D = Drain
TAB = Drain
D (TAB)
DS99316E(03/06)
D (TAB)
ns
A
V
D (TAB)

Related parts for IXFT30N60P

IXFT30N60P Summary of contents

Page 1

... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.5 ≤ DSS 500 -55 ... +150 150 -55 ...

Page 2

... Repetitive Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 (T = 25° C unless otherwise specified 0 pulse test DS ...

Page 3

... olts D S Fig Nor m alize d to DS(on 15A V alue vs . Drain Curre 2 10V GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1 mperes D © 2006 IXYS All rights reserved º 6. 5. º C 3.4 = 10V 3.1 7V 2.8 2.5 6V 2.2 5.5V 1.9 1.6 1.3 5V 0.7 4 ...

Page 4

... T = 125 0.4 0.5 0.6 0 olts S D Fig. 11. Capacitance 10000 f = 1MH z C iss 1000 C oss 100 olts D S IXYS reserves the right to change limits, test conditions, and dimensions 5 º 0.8 0.9 1 1.1 1.00 0.10 0. IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS Fig. 8. Trans conductance º ...

Page 5

... Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 S 6.15 BSC 242 BSC TO-268 (IXTT) Outline © 2006 IXYS All rights reserved Inches Max. .209 .102 .098 .055 .084 .123 .031 .845 .640 .800 .177 .144 .216 IXFH 30N60P IXFT 30N60P ...

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