IXFT30N60P IXYS, IXFT30N60P Datasheet - Page 2

• Manufacturer Part Number: IXFT30N60P
• Description: MOSFET N-CH 600V 30A TO-268 D3
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFT30N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Input Capacitance (ciss) @ Vds: 4000pF @ 25V
• Power - Max: 500W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 27 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 500000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.24
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 82
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
d(on)
r
d(off)
f
S
SM
rr
fs
SD
iss
oss
rss
g(on)
gs
gd
thJC
thCS
RM
4,850,072
4,881,106
V
V
V
R
V
TO-247, PLUS220
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25A, -di/dt = 100 A/µs
= 100V, V
4,931,844
5,017,508
5,034,796
= 0 V
= 20 V; I
= 10 V, V
= 4 Ω (External)
= 10 V, V
S
= 0 V, V
, V
GS
= 0 V,
5,049,961
5,063,307
5,187,117
GS
D
DS
DS
DS
= 0.5 I
= 0 V
= 25 V, f = 1 MHz
= 0.5 I
= 0.5 V
D25
5,237,481
5,381,025
5,486,715
D25
, pulse test
DSS
, I
D
(T
= 0.5 I
(T
6,162,665
6,259,123 B1
6,306,728 B1
J
J
= 25° C, unless otherwise specified)
= 25° C unless otherwise specified)
D25
IXFV 30N60P IXFV 30N60PS
6,404,065 B1
6,534,343
6,583,505
Min.
Min.
15
IXFH 30N60P IXFT 30N60P
Characteristic Values
Characteristic Values
4000
Typ. Max.
Typ. Max.
0.21
430
0.8
27
42
29
20
80
25
82
28
28
6,683,344
6,710,405B2
6,710,463
0.25 ° C/W
200
1.5
30
80
° C/W
6,727,585
6,759,692
6,771,478 B2
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V