IXFR26N50Q IXYS, IXFR26N50Q Datasheet
IXFR26N50Q
Manufacturer Part Number
IXFR26N50Q
Description
MOSFET N-CH 500V 24A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR24N50Q.pdf
(2 pages)
Specifications of IXFR26N50Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
3900pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.20
Ciss, Typ, (pf)
3900
Qg, Typ, (nc)
95
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFR26N50Q
Manufacturer:
IXYS
Quantity:
200
HiPerFET
ISOPLUS247
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low t
© 2001 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
Symbol
V
V
I
I
R
DM
GSS
DSS
D25
AR
J
JM
stg
L
GS(th)
DGR
GS
GSM
AR
AS
D
ISOL
DSS
DS(on)
DSS
Test Conditions
V
V
Test Conditions
S
J
J
C
C
C
C
C
J
C
GS
DS
GS
GS
GS
DS
= V
= 0 V, I
TM
DM
GS
rr
, I
, HDMOS
Power MOSFETs
D
D
TM
= 250uA
= 4mA
DC
D
DSS
G
DS
T
TM
GS
Family
DD
J
J
J
DSS
JM
min.
500
2.5
IXFR 26N50Q
IXFR 24N50Q
Characteristic Values
Maximum Ratings
typ.
max.
4.5
V
V
500 V
500 V
ISOPLUS 247
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
l
t
rr
V
DSS
E153432
250 ns
DS (on)
G
D
TM
24 A
22 A
I
D25
Isolated back surface*
TM
98664A (5/01)
0.20
0.23
R
DS(on)
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IXFR26N50Q Summary of contents
Page 1
... Symbol Test Conditions 250uA DSS 4mA GS(th GSS DSS DS DSS GS R DS(on © 2001 IXYS All rights reserved IXFR 26N50Q IXFR 24N50Q Family Maximum Ratings DSS Characteristic Values J min. typ. max. 500 2.5 4 DSS D25 500 0.20 500 0.23 t 250 ns rr ...
Page 2
... Source-Drain Diode Symbol Test Conditions IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values J min. typ. max. DSS D T DSS D T Characteristic Values J min. typ. max 4,835,592 ...