IXFR26N50Q IXYS, IXFR26N50Q Datasheet - Page 2

• Manufacturer Part Number: IXFR26N50Q
• Description: MOSFET N-CH 500V 24A ISOPLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFR26N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 3900pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.20
• Ciss, Typ, (pf): 3900
• Qg, Typ, (nc): 95
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
SM
RM
d(on)
d(off)
f
S
r
rr
fs
iss
oss
rss
g(on)
gd
thJC
thCK
SD
RM
gs
T
Test Conditions
Test Conditions
F
GS
DS
F
R
S
GS
GS
GS
G
s
GS
D
DS
T
DS
DS
DSS
DSS
J
J
J
J
J
T
T
D
D
JM
T
T
min.
min.
Characteristic Values
Characteristic Values
typ.
typ.
4,835,592
4,850,072
max.
max.
4,881,106
4,931,844
5,017,508
5,034,796
ISOPLUS 247 OUTLINE
5,049,961
5,063,307
IXFR 24N50Q
IXFR 26N50Q
5,187,117
5,237,481
5,486,715
5,381,025