IXTT24N50Q IXYS, IXTT24N50Q Datasheet
IXTT24N50Q
Manufacturer Part Number
IXTT24N50Q
Description
MOSFET N-CH 500V 24A TO-268
Manufacturer
IXYS
Datasheet
1.IXTH24N50Q.pdf
(4 pages)
Specifications of IXTT24N50Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
82nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
360W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
24 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.24
Ciss, Typ, (pf)
3000
Qg, Typ, (nc)
82
Trr, Typ, (ns)
500
Pd, (w)
360
Rthjc, Max, (k/w)
0.35
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
© 2003 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
D
D
DC
D
= 250 µA
= 250 µA
, V
= 0.5 I
G
= 2 Ω
DS
g
= 0
, High dv/dt
D25
GS
= 1 MΩ
DD
(T
T
T
≤ V
J
J
Advanced Technical Information
J
= 25°C, unless otherwise specified)
DSS
= 25°C
= 125°C
,
JM
IXTH 24N50Q
IXTT 24N50Q
500
min.
2.5
-55 to +150
-55 to +150
Characteristic Values
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
0.20
±30
±40
360
300
500
500
1.5
150
24
96
24
30
10
6
4
±100
0.24
max.
4.5
25
1
V/ns
mJ
°C
°C
°C
°C
mA
W
nA
µA
V
V
V
V
A
A
A
V
V
g
g
Ω
J
Features
Advantages
S = Source TAB = Drain
V
I
R
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G = Gate
D25
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
DS(on)
DS (on)
D
= 500 V
= 24 A
= 0.24 Ω Ω Ω Ω Ω
G
= Drain
S
g
DS99067(07/03)
process
(TAB)
(TAB)
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IXTT24N50Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved Advanced Technical Information IXTH 24N50Q IXTT 24N50Q Maximum Ratings 500 = 1 MΩ 500 GS ±30 ± 1.5 ≤ DSS 360 -55 to +150 ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. ...
Page 3
... Volts D S Fig. 3. Output Characteristics @ 125 Deg 10V Volts D S Fig Norm alized to I DS(on) Value vs 10V GS 3 2.5 2 1 Amperes D © 2003 IXYS All rights reserved 3.1 2.8 2.5 6V 2.2 1.9 1.6 5V 1.3 1 0.7 0 D25 125º 25ºC ...
Page 4
... V - Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 5 25ºC J 0.8 0.9 1 1.1 C iss 0 ...