IXTT24N50Q IXYS, IXTT24N50Q Datasheet - Page 4

• Manufacturer Part Number: IXTT24N50Q
• Description: MOSFET N-CH 500V 24A TO-268
• Manufacturer: IXYS

Specifications of IXTT24N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 360W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 24 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.24
• Ciss, Typ, (pf): 3000
• Qg, Typ, (nc): 82
• Trr, Typ, (ns): 500
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
10000
1000
100
42
36
30
24
18
12
72
60
48
36
24
12
6
0
0
3.5
0.4
0
Fig. 9. Source Current vs. Source-To-
f = 1MHz
0.5
5
4
T
J
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
= 120ºC
10
T
-40ºC
4.5
0.6
25ºC
J
= 125ºC
Drain Voltage
V
15
V
V
G S
S D
0.7
DS
5
- Volts
- Volts
20
- Volts
5.5
0.8
25
T
J
0.9
= 25ºC
6
C iss
C oss
30
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
C rss
6.5
1
35
1.1
40
7
0.01
0.1
45
40
35
30
25
20
15
10
10
5
0
8
6
4
2
0
1
Fig. 12. Maxim um Transient Therm al
0
0
1
T
J
= -40ºC
V
I
I
125ºC
D
G
6
DS
Fig. 8. Transconductance
25ºC
= 12A
= 10mA
= 250V
12
20
Fig. 10. Gate Charge
Pulse Width - milliseconds
Q
Resistance
18
10
G
I
- nanoCoulombs
D
- Amperes
24
40
30
IXTH 24N50Q
IXTT 24N50Q
100
36
60
42
6,534,343
48
80
1000
54