IXTQ40N50Q IXYS, IXTQ40N50Q Datasheet

IXTQ40N50Q

Manufacturer Part Number

IXTQ40N50Q

Description

MOSFET N-CH 500V 40A TO-3P

Manufacturer

IXYS

Datasheet

1.IXTQ40N50Q.pdf (4 pages)

Specifications of IXTQ40N50Q

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

160 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

40A

Vgs(th) (max) @ Id

4.5V @ 4mA

Gate Charge (qg) @ Vgs

130nC @ 10V

Input Capacitance (ciss) @ Vds

4500pF @ 25V

Power - Max

500W

Mounting Type

Through Hole

Package / Case

TO-3P

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.16 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

40 A

Power Dissipation

500 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

500

Id(cont), Tc=25°c, (a)

Rds(on), Max, Tj=25°c, (?)

0.14

Ciss, Typ, (pf)

4550

Qg, Typ, (nc)

130

Trr, Typ, (ns)

600

Pd, (w)

500

Rthjc, Max, (k/w)

0.25

Package Style

TO-3P

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Symbol

dv/dt

Weight

Symbol

High Current

Power MOSFET

Q-Class

N-Channel Enhancement Mode

Avalanche Rated, Low Q

Data Sheet

D25

GSS

DSS

stg

DGR

GSM

GS(th)

DSS

DS(on)

Test Conditions

Continuous

Transient

1.6 mm (0.063 in) from case for 10 s

Mounting torque

Test Conditions

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

≤ 150°C, R

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤ I

= 25°C

= 0 V, I

= V

= ±30 V

= V

= 0 V

= 10 V, I

DSS

, di/dt ≤ 100 A/µs, V

, I

= 250 µA

= 4 mA

, V

= 0.5 I

= 2 Ω

= 0

, High dv/dt

D25

= 1 MΩ

≤ V

= 25°C, unless otherwise specified)

DSS

= 25°C

= 125°C

IXTQ 40N50Q

500

min.

2.5

-55 to +150

Characteristic Values

Maximum Ratings

1.13/10 Nm/lb.in.

typ.

160

±30

±40

500

300

500

2.0

150

±100

0.16

max.

4.5

V/ns

°C

µA

Ω

Features

Advantages

TO-3P (IXTQ)

G = Gate

S = Source TAB = Drain

D25

IXYS advanced low Q

Low gate charge and capacitances

- easier to drive

- faster switching

International standard packages

Low R

Rated for unclamped Inductive load

switching (UIS) rated

Molding epoxies meet UL 94 V-0

flammability classification

Easy to mount

Space savings

High power density

DSS

DS(on)

DS (on)

= 500 V

= 40 A

= 0.16 Ω Ω Ω Ω Ω

= Drain

DS99056A(08/04)

process

(TAB)

Related parts for IXTQ40N50Q

IXTQ40N50Q Summary of contents

Page 1

... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXTQ 40N50Q Maximum Ratings 500 = 1 MΩ 500 GS ±30 ±40 40 160 2.0 ≤ DSS 500 -55 to +150 150 -55 to +150 300 1 ...

Page 2

... Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C, unless otherwise specified) J min. ...

Page 3

... Volts DS Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Normalized to I DS(on) Value vs. I 3.1 2 2 Amperes D © 2004 IXYS All rights reserved D25 D º º IXTQ 40N50Q Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I Value vs. DS(on) D25 Junction Temperature 2 ...

Page 4

... V - Volts SD Fig. 11. Capacitance 1 0000 iss 1 000 C oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 6 6.5 7 º 4,931,844 5,049,961 5,237,481 6,162,665 ...

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