IXTQ40N50Q IXYS, IXTQ40N50Q Datasheet - Page 4

• Manufacturer Part Number: IXTQ40N50Q
• Description: MOSFET N-CH 500V 40A TO-3P
• Manufacturer: IXYS

Specifications of IXTQ40N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 40 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 40
• Rds(on), Max, Tj=25°c, (?): 0.14
• Ciss, Typ, (pf): 4550
• Qg, Typ, (nc): 130
• Trr, Typ, (ns): 600
• Pd, (w): 500
• Rthjc, Max, (k/w): 0.25
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
1 0000
1 000
1 00
1 20
1 00
80
70
60
50
40
30
20
80
60
40
20
1 0
0
0
Fig. 9. Source Current vs. Source-To-Drain
3.5
0.4
0
T
J
= 1 20
f = 1 M Hz
5
-40
Fig. 7. Input Admittance
4
25
Fig. 11. Capacitance
º
º
º
C
0.6
C
1 0
C
4.5
T
J
= 1 25
C
V
C
V
rss
1 5
V
oss
SD
GS
C
DS
4,835,592
4,850,072
4,881,106
5
Voltage
º
iss
C
- Volts
- Volts
0.8
- Volts
20
5.5
25
4,931,844
5,017,508
5,034,796
T
6
J
= 25
30
1
º
6.5
C
5,049,961
5,063,307
5,187,117
35
1 .2
40
7
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
0.01
0.1
70
60
50
40
30
20
1 0
1 0
0
8
6
4
2
0
1
6,404,065 B1
6,534,343
6,583,505
Fig. 12. Maximum Transient Thermal
0
0
1
T
J
V
I
I
= -40
1 25
Fig. 8. Transconductance
10
D
G
20
D S
25
= 20A
= 1 0mA
Pulse Width - milliseconds
= 250V
º
º
Fig. 10. Gate Charge
º
C
C
20
6,683,344
6,710,405B2
6,710,463
C
Q
40
G
1 0
Resistance
I
30
- nanoCoulombs
D
- Amperes
60
40
6,727,585
6,759,692
80
IXTQ 40N50Q
50
1 00
1 00
60
1 20
70
1 000
80
1 40