IXTT28N50Q IXYS, IXTT28N50Q Datasheet
IXTT28N50Q
Specifications of IXTT28N50Q
Related parts for IXTT28N50Q
IXTT28N50Q Summary of contents
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... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved Advanced Technical Information IXTH 28N50Q IXTT 28N50Q Maximum Ratings 500 = 1 M 500 112 1 DSS 400 -55 to +150 150 -55 to +150 300 1.13/10 Nm/lb.in Characteristic Values ...
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... S GS Pulse test, t 300 s, duty cycle -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 16 28 ...
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... V - Volts DS Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Normalized to I DS(on) Value vs Amperes D © 2003 IXYS All rights reserved D25 D º C º IXTH 28N50Q IXTT 28N50Q Fig. 2. Extended Output Characteristics @ 25 deg Volts D S Fig Normalized to I Value vs. ...
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... Fig. 11. Capacitance 1 0000 iss 1 000 C oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 6 6.5 7 º 0 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 ...