IXTT28N50Q IXYS, IXTT28N50Q Datasheet - Page 4

• Manufacturer Part Number: IXTT28N50Q
• Description: MOSFET N-CH 500V 28A TO-268
• Manufacturer: IXYS

Specifications of IXTT28N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 3300pF @ 25V
• Power - Max: 400W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 28 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 25
• Rds(on), Max, Tj=25°c, (?): 0.2
• Ciss, Typ, (pf): 3300
• Qg, Typ, (nc): 94
• Trr, Typ, (ns): 500
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1 0000
1 000
1 00
84
70
56
42
28
56
49
42
35
28
1 4
21
1 4
0
7
0
Fig. 9. Source Current vs. Source-To-Drain
0.4
3.5
0
0.5
f = 1 M Hz
5
T
Fig. 7. Input Admittance
4
J
Fig. 11. Capacitance
T
= -40
1 25
J
0.6
25
= 1 25
1 0
4.5
º
º
º
C
C
C
V
0.7
V
º
1 5
V
C
G S
SD
DS
Voltage
5
- Volts
- Volts
0.8
20
- Volts
C
C
C
5.5
iss
oss
rss
0.9
25
T
J
6
= 25
30
1
º
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6.5
C
35
1 .1
1 .2
40
7
60
50
40
30
20
0.01
1 0
0
0.1
1 0
8
6
4
2
0
1
0
Fig. 12. Maximum Transient Thermal
0
1
T
J
= -40
1 25
V
I
I
Fig. 8. Transconductance
25
D
G
1 4
D S
= 1 4A
= 1 0mA
Pulse Width - milliseconds
º
º
º
= 250V
20
C
C
C
Fig. 10. Gate Charge
Q
28
G
I
1 0
Resistance
D
- nanoCoulombs
40
- Amperes
42
IXTH 28N50Q
IXTT 28N50Q
60
56
1 00
80
70
6,534,343
1 000
84
1 00