IXTT10N100D IXYS, IXTT10N100D Datasheet - Page 2
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IXTT10N100D
Manufacturer Part Number
IXTT10N100D
Description
MOSFET N-CH 1000V 10A TO-268
Manufacturer
IXYS
Datasheet
1.IXTH10N100D.pdf
(5 pages)
Specifications of IXTT10N100D
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
1.4 Ohm @ 10A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
400W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vds, Max, (v)
1000
Id(on), Min, (a)
10
Rds(on), Max, (?)
1.4
Vgs(off), Max, (v)
-3.50
Ciss, Typ, (pf)
2500
Crss, Typ, (pf)
100
Qg, Typ, (nc)
0.31
Pd, (w)
400
Rthjc, Max, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTT10N100D
Manufacturer:
TE
Quantity:
1 001
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
V
t
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
(TO-247)
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
R
G
= I
= 10A, -di/dt = 100A/μs
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 30V, I
= -10V, V
= -10V, V
= 4.7Ω (External)
= 10V, V
D25
, V
GS
D
= -10V, Note 1
DS
GS
= 0.5 • I
DS
DS
= 0.5 • V
= -10V
4,835,592
4,881,106
= 25V, f = 1MHz
= 0.5 • V
D25
, Note 1
DSX
4,931,844
5,017,508
5,034,796
DSX
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
D25
D25
5,237,481
5,381,025
5,486,715
Min.
3.0
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
2500
300
100
110
130
0.21
Typ.
850
Typ.
5.4
35
85
75
27
58
1.1
0.31 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
1.5
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
V
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-268 (IXTT) Outline
TO-247 (IXTH) Outline
6,727,585
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
7,005,734 B2
7,063,975 B2
IXTH10N100D
IXTT10N100D
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Tab - Drain
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216