IXTT10N100D IXYS, IXTT10N100D Datasheet - Page 5
![MOSFET N-CH 1000V 10A TO-268](/photos/28/11/281182/ixtt10n100d_sml.jpg)
IXTT10N100D
Manufacturer Part Number
IXTT10N100D
Description
MOSFET N-CH 1000V 10A TO-268
Manufacturer
IXYS
Datasheet
1.IXTH10N100D.pdf
(5 pages)
Specifications of IXTT10N100D
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
1.4 Ohm @ 10A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
400W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.4 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vds, Max, (v)
1000
Id(on), Min, (a)
10
Rds(on), Max, (?)
1.4
Vgs(off), Max, (v)
-3.50
Ciss, Typ, (pf)
2500
Crss, Typ, (pf)
100
Qg, Typ, (nc)
0.31
Pd, (w)
400
Rthjc, Max, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTT10N100D
Manufacturer:
TE
Quantity:
1 001
© 2009 IXYS CORPORATION, All Rights Reserved
100.0
10.0
1.00
0.10
0.01
1.0
0.1
0.0001
10
R
Fig. 13. Forward-Bias Safe Operating Area
DS(on)
Limit
100
@ T
V
0.001
DS
C
= 25ºC
- Volts
DC
Fig. 15. Maximum Transient Thermal Impedance
1,000
1ms
10ms
100ms
25µs
100µs
T
T
Single Pulse
J
C
= 150ºC
= 25ºC
0.01
Pulse Width - Seconds
10,000
100.0
10.0
1.0
0.1
10
R
Fig. 14. Forward-Bias Safe Operating Area
DS(on)
0.1
Limit
100
@ T
V
DS
C
= 75ºC
- Volts
1
DC
IXTH10N100D
1,000
IXTT10N100D
25µs
100µs
10ms
1ms
100ms
IXYS REF: T_10N100D(7N)3-31-09-B
T
T
Single Pulse
J
C
= 150ºC
= 75ºC
10,000
10