IXFC36N50P IXYS, IXFC36N50P Datasheet
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Manufacturer Part Number
IXFC36N50P
Description
MOSFET N-CH 500V 19A ISOPLUS220
Specifications of IXFC36N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
93nC @ 10V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
156W
Mounting Type
Through Hole
Package / Case
ISOPLUS220™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Forward Transconductance Gfs (max / Min)
35 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
19 A
Power Dissipation
156 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
19
Rds(on), Max, Tj=25°c, (?)
0.19
Ciss, Typ, (pf)
5500
Qg, Typ, (nc)
93
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
156
Rthjc, Max, (ºc/w)
0.75
Package Style
ISOPLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
F
Weight
© 2006 IXYS All rights reserved
GSS
DSS
D25
DM
AR
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GSS
GSM
AR
AS
D
ISOL
C
J
DSS
= 25° C unless otherwise specified)
Test Conditions
V
V
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting Force
(IXFC)
(IXFR)
V
S
GS
DS
GS
DS
GS
J
J
C
C
C
C
C
J
C
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ± 30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 4 mA
= 250 µA
= I
G
, V
= 4 Ω
T
DS
= 0
(IXFC)
(IXFR)
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
,
IXFC 36N50P
IXFR 36N50P
20..120 / 4.5..25
500
Min.
2.5
11..65 / 2.5..15
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
2500
± 30
± 40
500
500
100
156
150
300
1.5
19
36
50
20
± 100
3
5
250
190
Max.
5.0
25
V/ns
N/lb
N/lb
m Ω
mJ
nA
µA
µA
V~
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
g
J
ISOPLUS220
ISOPLUS247
Features
l
l
l
l
l
l
Advantages
l
l
l
G = Gate
S = Source
International standard isolated
UL recognized packages
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
packages
V
I
R
t
Fast intrinsic diode
Easy to mount
Space savings
High power density
G
D25
rr
DSS
DS(on)
G
D
E153432
E153432
D
S
S
= 500
=
≤ ≤ ≤ ≤ ≤ 190
TM
TM
≤ ≤ ≤ ≤ ≤ 200
Isolated back
Isolated back
(IXFC)
(IXFR)
D = Drain
19
DS99312E(10/05)
surface
surface
m Ω Ω Ω Ω Ω
ns
A
V
Related parts for IXFC36N50P
IXFC36N50P Summary of contents
... GS(th ± GSS DSS DS DSS DS(on © 2006 IXYS All rights reserved IXFC 36N50P IXFR 36N50P Maximum Ratings 500 = 1 MΩ 500 GS ± 30 ± 100 1.5 ≤ DSS 156 -55 ... +150 150 -55 ... +150 300 2500 11..65 / 2.5..15 20..120 / 4.5.. Characteristic Values Min ...
... RM Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ Test current I = 18A. T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C unless otherwise specified) J Min ...
... olts D S Fig Nor m alize d to DS(on 18A V alue ain Cur 3 10V GS 3 2.6 2.2 1.8 1 mperes D © 2006 IXYS All rights reserved º 5. º C 3.1 2.8 2.5 2.2 1.9 5.5V 1.6 1.3 5V 4.5V 0.7 0 125º 25ºC ...
... Fig. 9. Sour ce Cur Sour ce -To-Dr ain V oltage 100 125º 0.4 0.5 0.6 0.7 0 olts S D Fig. 11. Capacitance 10000 1000 100 f = 1MH olts D S IXYS reserves the right to change limits, test conditions, and dimensions 6 25º 0.9 1 1.1 1.2 1000 100 C oss ...
... Fig. 13. M axim um Trans ie nt The tance 1.00 0.10 0.01 0.0001 0.001 © 2006 IXYS All rights reserved 0.01 0.1 Pulse Width - Seconds IXFC 36N50P IXFR 36N50P 1 10 IXYS REF: F_36N50P (7J) 12-06-05-C.xls ...
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