IXFC36N50P IXYS, IXFC36N50P Datasheet - Page 5

• Manufacturer Part Number: IXFC36N50P
• Description: MOSFET N-CH 500V 19A ISOPLUS220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFC36N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 93nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 156W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS220™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Forward Transconductance Gfs (max / Min): 35 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 156 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 19
• Rds(on), Max, Tj=25°c, (?): 0.19
• Ciss, Typ, (pf): 5500
• Qg, Typ, (nc): 93
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 156
• Rthjc, Max, (ºc/w): 0.75
• Package Style: ISOPLUS220™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig. 13. M axim um Trans ie nt The rm al Re s is tance
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Pulse Width - Seconds
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IXYS REF: F_36N50P (7J) 12-06-05-C.xls
IXFC 36N50P
IXFR 36N50P
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