STW45NM50 STMicroelectronics, STW45NM50 Datasheet - Page 4

• Manufacturer Part Number: STW45NM50
• Description: MOSFET N-CH 500V 45A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW45NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 22.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 3700pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 45 A
• Power Dissipation: 417000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2760-5

Electrical characteristics
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Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
R
DSS
GSS
fs
Q
oss
oss eq
rss
iss
gs
gd
G
g
(1)
(2)
= 25 °C unless otherwise specified)
. is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
Doc ID 8477 Rev 5
I
V
V
V
V
V
V
I
V
V
V
V
Figure 14
f=1 MHz Gate DC Bias= 0
test signal level = 20 mV
open drain
D
D
DS
DS
GS
DS
GS
DS
DS
GS
DD
GS
= 22.5 A
= 250 µA, V
= V
= 10 V, I
=0, V
= 400 V, I
= Max rating,
= Max rating @125 °C
= ± 30 V
>I
=25 V, f=1 MHz, V
=10 V
Test conditions
Test conditions
D(on)
GS
DS
, I
x R
D
D
=0 to 400 V
= 22.5 A
D
= 250 µA
GS
DS(on)max
= 45 A
= 0
GS
=0
Min.
Min.
500
3
-
-
-
-
-
3700
Typ.
Typ.
0.08
610
325
1.7
20
80
87
23
42
4
oss
STW45NM50
Max.
Max.
±
when V
117
100
0.1
100
10
5
DS
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
Ω
S
Ω
V
V