STW45NM50 STMicroelectronics, STW45NM50 Datasheet - Page 5
![MOSFET N-CH 500V 45A TO-247](/photos/5/30/53058/to-247_sml.jpg)
STW45NM50
Manufacturer Part Number
STW45NM50
Description
MOSFET N-CH 500V 45A TO-247
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STW45NM50.pdf
(12 pages)
Specifications of STW45NM50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 22.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
117nC @ 10V
Input Capacitance (ciss) @ Vds
3700pF @ 25V
Power - Max
417W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
45 A
Power Dissipation
417000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2760-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STW45NM50
Manufacturer:
FSC
Quantity:
2 000
Company:
Part Number:
STW45NM50FD
Manufacturer:
ATMEL
Quantity:
516
STW45NM50
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
t
V
SDM
t
r(Voff)
I
I
d(on)
RRM
RRM
I
SD
Q
Q
t
t
SD
t
t
t
c
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 8477 Rev 5
I
I
di/dt = 100 A/µs,
(see Figure 18)
I
di/dt = 100 A/µs,
V
V
R
Figure 15
V
R
Figure 15
SD
SD
SD
DD
DD
DD
G
G
= 45 A, Tj = 150 °C
=4.7 Ω, V
=4.7 Ω, V
= 45 A, V
= 45 A, V
=100 V,
=250 V, I
=400 V, I
Test conditions
Test conditions
(see Figure 18)
GS
GS
GS
DD
D
D
= 22.5 A,
= 45 A,
=10 V
=10 V
= 0
= 100 V
Electrical characteristics
Min.
Min.
-
-
-
-
-
-
-
107.5
110.9
1600
4017
Typ.
Typ.
24.8
26.5
21.6
87.7
200
324
16
Max. Unit
Max. Unit
180
1.5
45
-
-
nC
nC
ns
ns
ns
ns
ns
ns
ns
5/12
A
A
V
A
A