IXFR44N50P IXYS, IXFR44N50P Datasheet
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Manufacturer Part Number
IXFR44N50P
Description
MOSFET N-CH 500V 24A ISOPLUS247
Specifications of IXFR44N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
98nC @ 10V
Input Capacitance (ciss) @ Vds
5440pF @ 25V
Power - Max
208W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Forward Transconductance Gfs (max / Min)
32 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
24 A
Power Dissipation
208 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.15
Ciss, Typ, (pf)
5440
Qg, Typ, (nc)
98
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
208
Rthjc, Max, (ºc/w)
0.6
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHV
Power MOSFET
ISOPLUS247
(Electrically Isolated Back Surface)
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
N-Channel Enhancement
Avalanche Rated
Fast Intrinsic Diode
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GSM
GSM
AR
AS
D
ISOL
C
GS(th)
DS(on)
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Transient
Continuous
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting Force
Test Conditions
V
V
V
V
V
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 175° C
= 25° C to 175° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
TM
D
= 4 mA
= 250 µA
, V
G
= 22 A
= 10 Ω
DS
= 0
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXFR 44N50P
,
20..120 / 4.5..25
500
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
2500
500
500
±40
±30
132
208
150
300
1.7
24
44
55
10
5
±100
500
Max.
5.0
150
25
V/ns
N/lb
mJ
mΩ
V~
nA
µA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
Features
l
l
l
l
l
l
Advantages
l
l
l
ISOPLUS247 (IXFR)
G = Gate
S = Source
International standard isolated
package
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Easy to mount
Space savings
High power density
V
I
R
t
G
D25
rr
DS(on)
DSS
D
E153432
S
≤ ≤ ≤ ≤ ≤ 150 m Ω Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 200
= 500
= 24
D = Drain
ISOLATED TAB
DS99319E(03/06)
ns
A
V
Related parts for IXFR44N50P
IXFR44N50P Summary of contents
... GS(th ± GSS DSS DS DSS DS(on © 2006 IXYS All rights reserved IXFR 44N50P Maximum Ratings 500 = 1 MΩ 500 GS ±40 ±30 24 132 1.7 ≤ DSS 208 -55 ... +150 150 -55 ... +150 300 2500 20..120 / 4.5..25 5 Characteristic Values Min. Typ. 500 2.5 ± ...
... A/µ 100V RM R Notes: 1. Pulse test, t ≤ 300 ms, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: Characteristic Values (T = 25° C, unless otherwise specified) J Min. ...
... Volts DS Fig Normalized to I DS(on Drain Current 3.2 3 10V GS 2.8 T 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 Amperes D © 2006 IXYS All rights reserved 100 = 10V 3.2 = 10V 7V 2.8 2 1.6 5V 1.2 0.8 0 -50 = 22A Value 125º ...
... V - Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 120 100 125º 0.4 0.5 0.6 0.7 0 Volts SD Fig. 11. Capacitance 10,000 1,000 100 MHz Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 5 25º 0.9 1 1.1 1.2 0 1,000 ...
... IXYS All rights reserved Fig. 13. Maximum Transient Thermal Resistance 0.01 0.1 Pulse W idth - Seconds IXFR 44N50P 1 10 IXYS REF: T_44N50P (8J) 03-21-06-B.XLS ...
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