IXFR44N50P IXYS, IXFR44N50P Datasheet - Page 4

MOSFET N-CH 500V 24A ISOPLUS247

IXFR44N50P

Manufacturer Part Number
IXFR44N50P
Description
MOSFET N-CH 500V 24A ISOPLUS247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFR44N50P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
98nC @ 10V
Input Capacitance (ciss) @ Vds
5440pF @ 25V
Power - Max
208W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohms
Forward Transconductance Gfs (max / Min)
32 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
24 A
Power Dissipation
208 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.15
Ciss, Typ, (pf)
5440
Qg, Typ, (nc)
98
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
208
Rthjc, Max, (ºc/w)
0.6
Package Style
ISOPLUS247™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFR44N50P
Manufacturer:
IXYS
Quantity:
200
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
140
120
100
100
65
60
55
50
45
40
35
30
25
20
15
10
80
60
40
20
10
5
0
0
3.5
0.4
0
f = 1 MHz
0.5
5
Fig. 9. Forward Voltage Drop of
4
0.6
10
Fig. 7. Input Admittance
T
Fig. 11. Capacitance
J
= 125ºC
4.5
- 40ºC
Intrinsic Diode
25ºC
T
0.7
J
V
15
V
V
= 125ºC
SD
GS
DS
- Volts
- Volts
- Volts
0.8
20
5
0.9
25
C iss
C oss
5.5
T
C rss
J
= 25ºC
30
1
6
1.1
35
1.2
6.5
40
1,000
60
55
50
45
40
35
30
25
20
15
10
100
10
5
0
10
9
8
7
6
5
4
3
2
1
0
1
0
10
0
T
J
Fig. 12. Forward-Bias Safe Operating Area
V
I
I
= - 40ºC
R
D
G
125ºC
DS
10
DS(on)
25ºC
= 22A
= 10mA
10
= 250V
20
Limit
Fig. 8. Transconductance
20
30
Q
Fig. 10. Gate Charge
G
I
- NanoCoulombs
D
V
40
- Amperes
DS
DC
30
- Volts
100
50
40
60
IXFR 44N50P
70
50
80
T
T
J
C
= 150ºC
= 25ºC
60
25µs
1ms
10ms
100µs
90
1000
100
70

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