IXFJ32N50Q IXYS, IXFJ32N50Q Datasheet

IXFJ32N50Q

Manufacturer Part Number

IXFJ32N50Q

Description

MOSFET N-CH 500V 32A TO-220

Manufacturer

IXYS

Series

HiPerFET™r

Datasheet

1.IXFJ32N50Q.pdf (4 pages)

Specifications of IXFJ32N50Q

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

150 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

32A

Vgs(th) (max) @ Id

4V @ 4mA

Gate Charge (qg) @ Vgs

153nC @ 10V

Input Capacitance (ciss) @ Vds

3950pF @ 25V

Power - Max

360W

Mounting Type

Through Hole

Package / Case

TO-220

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.15 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

32 A

Power Dissipation

360 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

500

Id(cont), Tc=25°c, (a)

Rds(on), Max, Tj=25°c, (?)

0.16

Ciss, Typ, (pf)

3950

Qg, Typ, (nc)

153

Trr, Typ, (ns)

Trr, Max, (ns)

250

Pd, (w)

357

Rthjc, Max, (ºc/w)

0.35

Package Style

TO-268 (I3 - PAK)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 4
Download datasheet (91Kb)

N-Channel Enhancement Mode

Avalanche Rated

High dv/dt, Low t

Preliminary data sheet

Symbol

dv/dt

Symbol

IXYS reserves the right to change limits, test conditions, and dimensions.

HiPerFET

Power MOSFETs

Q-Class

D25

GSS

DSS

stg

DGR

DSS

GSM

DSS

GS(th)

DS(on)

Test Conditions

Continuous

Transient

1.6 mm (0.062 in.) from case for 10 s

Test Conditions

Pulse test, t £ 300 ms, duty cycle d £ 2 %

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 25°C, pulse width limited by T

= 25°C

£ I

£ 150°C, R

= 25°C

= 0 V, I

= V

= ±20 V

= V

= 0 V

= 10 V, I

, di/dt £ 100 A/ms, V

DSS

, HDMOS

, I

= 250 mA

= 4 mA

, V

= 0.5 I

= 2 W

= 0

D25

= 1 MW

Family

£ V

= 25°C

= 125°C

DSS

= 25°C, unless otherwise specified)

IXFJ 32N50Q

min.

500

Characteristic Values

-55 ... +150

Maximum Ratings

typ.

500

±20

±30

128

360

150

300

1.5

max.

±100

0.15

100

V/ns

°C

Features

• Low profile, high power package

• Long creep and strike distances

• Easy up-grade path for TO-220

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

• DC choppers

• AC motor control

• Temperature and lighting controls

• Low voltage relays

Advantages

• High power, low profile package

• Space savings

• High power density

G = Gate,

S = Source,

D(cont)

designs

rated

- easy to drive and to protect

power supplies

DSS

DS(on)

DS (on)

= 500

= 0.15

< 250

low Qg process

D = Drain,

TAB = Drain

98579B (5/31/00)

(TAB)

1 - 4

Related parts for IXFJ32N50Q

IXFJ32N50Q Summary of contents

Page 1

... V DSS DS DSS 0.5 I DS(on D25 Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFJ 32N50Q TM Family Maximum Ratings 500 = 1 MW 500 GS ±20 ±30 32 128 ...

Page 2

... D D25 85 0.25 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ 100 V 0.75 R 7.5 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFJ 32N50Q TO-268 Outline max All metal area are ...

Page 3

... Volts DS Figure 3. R normalized to 15A/25 DS(on) 2 10V GS 2.4 0 Tj=125 C 2.0 1.6 Tj=25 1.2 0 Amperes D Figure 5. Drain Current vs. Case Temperature -50 - Degrees C C © 2000 IXYS All rights reserved vs 2.8 2.4 2.0 1 1.2 0 100 125 150 IXFJ 32N50Q Figure 2. Output Characteristics at 125 125 ...

Page 4

... T T =25 = 0.4 0.6 0 Volts SD Figure 10. Transient Thermal Resistance 0.40 0.20 0.10 0.08 0.06 0.04 0.02 0. © 2000 IXYS All rights reserved Figure 8. Capacitance Curves 10000 1000 100 200 250 1.0 1 Pulse Width - Seconds IXFJ 32N50Q F = 1MHz F = 1MHz Ciss Coss Crss 5 10 ...

Related keywords

IXFJ32N50Q datasheet
IXFJ32N50Q data sheet
IXFJ32N50Q pdf datasheet
IXFJ32N50Q component
IXFJ32N50Q part
IXFJ32N50Q distributor
IXFJ32N50Q RoHS
IXFJ32N50Q datasheet download