IXFJ32N50Q IXYS, IXFJ32N50Q Datasheet - Page 4

• Manufacturer Part Number: IXFJ32N50Q
• Description: MOSFET N-CH 500V 32A TO-220
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFJ32N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 153nC @ 10V
• Input Capacitance (ciss) @ Vds: 3950pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 32
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 3950
• Qg, Typ, (nc): 153
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 357
• Rthjc, Max, (ºc/w): 0.35
• Package Style: TO-268 (I3 - PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
100
14
12
10
80
60
40
20
8
6
4
2
0
0
0.4
0.40
0.20
0.10
0.08
0.06
0.04
0.02
0.01
Figure 9. Forward Voltage Drop of the
0
Figure 7. Gate Charge
V
10
GS
Figure 10. Transient Thermal Resistance
-3
= 0V
Vds=300V
50
I
I
D
G
=16A
=10mA
0.6
Intrinsic Diode
Gate Charge - nC
T
J
=125
100
V
SD
O
C
- Volts
0.8
150
T
T
J
J
=25
=25
O
O
10
C
C
1.0
-2
200
250
1.2
Pulse Width - Seconds
10
-1
10000
1000
100
0
Figure 8. Capacitance Curves
5
Coss
Ciss
Crss
10
V
DS
10
0
- Volts
15
F = 1MHz
F = 1MHz
20
IXFJ 32N50Q
25
10
1
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