IXFH23N80Q IXYS, IXFH23N80Q Datasheet

IXFH23N80Q

Manufacturer Part Number

IXFH23N80Q

Description

MOSFET N-CH 800V 23A TO-247

Manufacturer

IXYS

Series

HiPerFET™r

Datasheet

1.IXFH23N80Q.pdf (5 pages)

Specifications of IXFH23N80Q

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

420 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

800V

Current - Continuous Drain (id) @ 25° C

23A

Vgs(th) (max) @ Id

4.5V @ 3mA

Gate Charge (qg) @ Vgs

130nC @ 10V

Input Capacitance (ciss) @ Vds

4900pF @ 25V

Power - Max

500W

Mounting Type

Through Hole

Package / Case

TO-247AD

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.42 Ohms

Drain-source Breakdown Voltage

800 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

23 A

Power Dissipation

500 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

800

Id(cont), Tc=25°c, (a)

Rds(on), Max, Tj=25°c, (?)

0.40

Ciss, Typ, (pf)

5100

Qg, Typ, (nc)

120

Trr, Typ, (ns)

Trr, Max, (ns)

250

Pd, (w)

500

Rthjc, Max, (ºc/w)

0.25

Package Style

TO-247

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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HiPerFET

Power MOSFETs

Q-Class

N-Channel Enhancement Mode

Avalanche Rated,

Low Q

Symbol

dv/dt

Weight

GSS

D25

DSS

stg

GS(th)

DGR

DSS

DS(on)

DSS

GSM

, High dv/dt

Test Conditions

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Test Conditions

Continuous

Transient

1.6 mm (0.063 in) from case for 10 s

Mounting torque

Mounting Force

= 25°C to 150°C

= 25°C to 150°C; R

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤ I

≤ 150°C, R

= 25°C

= 0 V, I

= V

= ±30 V

= V

= 0 V

= 10 V, I

DSS

, di/dt ≤ 100 A/µs, V

, I

= 250 µA

= 3 mA

, V

= 0.5 • I

= 2 Ω

= 0

D25

= 1 MΩ

TO-247

TO-268

TO-247

≤ V

= 25°C

= 125°C

= 25°C, unless otherwise specified)

DSS

min.

800

IXFH23N80Q

IXFT23N80Q

2.5

Characteristic Values

-55 ... +150

20...120/4.5...27 N/lb

Maximum Ratings

1.13/10 Nm/lb.in.

typ.

800

±30

±40

500

150

300

1.5

max.

±100

0.42

4.5

V/ns

µA

°C

Ω

G = Gate

S = Source

Features

Advantages

TO-247 AD (IXFH)

TO-268 (D3) ( IXFT)

IXYS advanced low Q

International standard packages

classification

Low R

Avalanche energy and current rated

Fast intrinsic rectifier

Epoxy meets UL 94 V-0 flammability

Easy to mount

Space savings

High power density

D25

DSS

DS(on)

≤ ≤ ≤ ≤ ≤ 250 ns

DS (on)

low Q

= 0.42 Ω Ω Ω Ω Ω

TAB = Drain

DS99060A(02/04)

800 V

process

23 A

(TAB)

Related parts for IXFH23N80Q

IXFH23N80Q Summary of contents

Page 1

... V = ± GSS DSS DS DSS 0.5 • I DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved IXFH23N80Q IXFT23N80Q Maximum Ratings 800 = 1 MΩ 800 GS ±30 ± 1.5 ≤ DSS 500 -55 ... +150 150 -55 ... +150 300 TO-247 1.13/10 Nm/lb.in. ...

Page 2

... D25 55 0.25 0.25 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 100 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 IXFH23N80Q IXFT23N80Q TO-247 AD (IXFH) Outline Dim. Millimeter n s Min. Max ...

Page 3

... Volts D S Fig Norm alize d to DS(on) 0.5 I Value vs. I D25 2.8 2 10V GS 2.4 2.2 2 1.8 1.6 1.4 1 Amperes D © 2004 IXYS All rights reserved º 4. º C 2.8 = 10V 2.5 6V 2.2 5V 1.9 1.6 1.3 4.5V 0.7 0 125º 25ºC ...

Page 4

... 0.4 0.5 0.6 0.7 0 Volts S D Fig. 11. Capacitance 10000 1000 100 f = 1MHz Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 5 25º 0 ...

Page 5

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