IXFH23N80Q IXYS, IXFH23N80Q Datasheet - Page 4

• Manufacturer Part Number: IXFH23N80Q
• Description: MOSFET N-CH 800V 23A TO-247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH23N80Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 420 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4.5V @ 3mA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 4900pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.42 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 23
• Rds(on), Max, Tj=25°c, (?): 0.40
• Ciss, Typ, (pf): 5100
• Qg, Typ, (nc): 120
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
10000
1000
100
35
30
25
20
15
10
70
60
50
40
30
20
10
10
5
0
0
3.5
0.4
0
f = 1MHz
0.5
5
T
J
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
= 125ºC
4
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0.6
10
-40ºC
25ºC
T
J
= 125ºC
V
0.7
V
15
4.5
V
G S
S D
D S
- Volts
- Volts
0.8
20
- Volts
5
0.9
25
T
J
C rss
C iss
C oss
= 25ºC
30
1
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
5.5
1.1
35
1.2
40
6
60
50
40
30
20
10
10
0
9
8
7
6
5
4
3
2
1
0
0
0
T
V
I
I
J
D
G
5
DS
20
Fig. 8. Transconductance
= -40ºC
= 11.5A
= 10mA
125ºC
25ºC
= 400V
Fig. 10. Gate Charge
10
40
Q
G
15
I
- nanoCoulombs
D
- Amperes
60
20
80
25
100
30
6,534,343
120
35
140
40