IXTH12N100L IXYS, IXTH12N100L Datasheet - Page 2

• Manufacturer Part Number: IXTH12N100L
• Description: MOSFET N-CH 1000V 12A TO-247
• Manufacturer: IXYS

Specifications of IXTH12N100L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.3 Ohm @ 500mA, 20V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 155nC @ 20V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 1.3
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 155
• Trr, Typ, (ns): 1000
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe-Operating-Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
I
I
V
t
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
(T
f
(T
S
SM
d(on)
r
d(off)
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
F
F
DS
GS
GS
GS
DS
GS
G
= I
= I
= 20V, I
= 4.7Ω (External)
= 20V, V
= 0V
= 0V, V
= 800V, I
= 15V, V
S
S
, V
, -di/dt = 100A/μs, V
GS
= 0V, Note 1
D
DS
DS
DS
= 0.5 • I
D
= 25V, f = 1MHz
= 0.5 • V
= 0.25A, T
= 0.5 • V
4,835,592
4,881,106
DSS
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
R
C
, I
, I
= 100V, V
= 60°C
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
GS
DSS
DSS
= 0V
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
Min.
3.0
Characteristic Values
200
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
2500
Typ.
Typ.
0.21
1000
300
110
155
Typ.
5.0
95
30
55
65
35
55
0.31
Max.
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
1.5
12
48
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
W
S
A
A
V
6,683,344
6,710,405 B2
6,710,463
TO-247 (IXTH) Outline
6,727,585
6,759,692
6,771,478 B2 7,071,537
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXTH12N100L
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
1
.4
3 - Source
7,005,734 B2 7,157,338B2
7,063,975 B2
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
.819
.610
.780
2 - Drain
Min.
.185
.087
.059
.040
.065
.113
.016
.140
.170
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216