IXTH12N100L IXYS, IXTH12N100L Datasheet - Page 4

• Manufacturer Part Number: IXTH12N100L
• Description: MOSFET N-CH 1000V 12A TO-247
• Manufacturer: IXYS

Specifications of IXTH12N100L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.3 Ohm @ 500mA, 20V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 155nC @ 20V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 1.3
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 155
• Trr, Typ, (ns): 1000
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
10
16
14
12
10
36
32
28
24
20
16
12
8
6
4
2
0
8
4
0
0.3
3.5
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0.4
5
4.5
0.5
10
5.5
Fig. 7. Input Admittance
0.6
Fig. 11. Capacitance
15
T
V
V
J
6.5
SD
GS
= 125ºC
0.7
V
- Volts
DS
- Volts
20
- Volts
T
J
0.8
= 125ºC
7.5
- 40ºC
25ºC
25
0.9
8.5
T
30
J
1.0
= 25ºC
C iss
C oss
C rss
9.5
35
1.1
10.5
1.2
40
0.01
0.1
20
18
16
14
12
10
10
8
6
4
2
0
0.0001
9
8
7
6
5
4
3
2
1
0
1
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
= 6A
= 10mA
20
= 500V
2
0.001
40
4
Fig. 8. Transconductance
Fig. 10. Gate Charge
Q
G
Pulse Width - Seconds
60
6
- NanoCoulombs
I
D
- Amperes
0.01
IXTH12N100L
80
8
100
10
125ºC
T
J
= - 40ºC
0.1
120
25ºC
12
140
14
160
1
16