STW45NM60 STMicroelectronics, STW45NM60 Datasheet - Page 4

• Manufacturer Part Number: STW45NM60
• Description: MOSFET N-CH 650V 45A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW45NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 22.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 134nC @ 10V
• Input Capacitance (ciss) @ Vds: 3800pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 45 A
• Power Dissipation: 417000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2768-5

Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
g
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
R
DSS
GSS
fs
Q
oss
oss eq.
rss
iss
gs
gd
G
g
(1)
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage
Drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
V
I
V
V
f=1 MHz Gate DC Bias = 0
test signal level = 20mV
open drain
V
V
Figure 14
I
V
V
V
V
V
D
D
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
= 22.5A
= 250 µA, V
> I
= 25V, f = 1 MHz, V
= 0V, V
= 400V, I
= 10V
= Max rating
= Max rating, T
= ±30V
= V
= 10V, I
Test conditions
D(on)
Test conditions
GS
, I
DS
x R
D
D
D
= 22.5A
GS
= 250µA
= 0V to 480V
= 45A,
DS(on)max,
= 0
C
= 125 °C
GS
= 0
Min. Typ. Max.
Min.
600
3
3800
1250
340
1.4
Typ. Max. Unit
0.09
30
80
96
31
43
4
oss
STW45NM60
when V
134
±100
0.11
100
10
5
DS
Unit
nC
nC
nC
pF
pF
pF
pF
µA
µA
nA
S
Ω
V
V
Ω