STW45NM60 STMicroelectronics, STW45NM60 Datasheet - Page 5

• Manufacturer Part Number: STW45NM60
• Description: MOSFET N-CH 650V 45A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW45NM60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 22.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 134nC @ 10V
• Input Capacitance (ciss) @ Vds: 3800pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 45 A
• Power Dissipation: 417000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2768-5

STW45NM60
Table 6.
Table 7.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Symbol
Symbol
V
t
t
r(Voff)
I
I
I
d(on)
SD
RRM
RRM
I
SDM
Q
Q
t
t
SD
t
t
t
c
r
f
rr
rr
rr
rr
(1)
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
Figure 13
V
R
Figure 13
I
I
di/dt = 100A/µs,
V
Figure 15
I
di/dt = 100A/µs,
V
Figure 15
SD
SD
SD
DD
DD
DD
DD
G
G
= 4.7Ω V
= 4.7Ω, V
= 45A, V
= 45A,
= 45A,
Test conditions
Test conditions
= 250V, I
= 400V, I
= 100 V, T
= 100 V, T
GS
GS
GS
D
D
j
j
= 22.5A
= 10V
= 45A,
= 0
= 25°C
= 150°C
= 10V
Min.
Min.
Electrical characteristics
Typ.
Typ.
508
650
30
20
16
23
40
10
40
14
43
Max.
Max.
180
1.5
45
Unit
Unit
ns
ns
ns
ns
ns
µC
µC
ns
ns
5/12
A
A
V
A
A