STW9N150 STMicroelectronics, STW9N150 Datasheet - Page 4

• Manufacturer Part Number: STW9N150
• Description: MOSFET N-CH 1500V 8A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r
• Type: Power MOSFETr

Specifications of STW9N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 4A, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 89.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 3255pF @ 25V
• Power - Max: 320W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 1.8ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 320 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 2.5Ohm
• Drain-source On-volt: 1.5kV
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8465-5

Electrical characteristics
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Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
V
Symbol
Symbol
C
V
R
(BR)DSS
g
C
I
I
C
oss eq.
C
Q
GS(th)
Q
DS(on
GSS
DSS
fs
Q
R
oss
iss
rss
gs
gd
g
g
(1)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent Output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
V
V
V
f=1MHz Gate DC Bias=0
Test signal level=20 mV
open drain
V
V
(see Figure 15)
I
V
V
V
V
D
DS
DS
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 15 V, I
= 25 V, f = 1 MHz, V
= 0, V
= 10 V
= ± 30 V
= V
= 10 V, I
= 1200 V, I
Test conditions
Test conditions
GS
DS
, I
GS
D
D
D
= 0 to 1200 V
= 250 µA
= 4 A
= 4 A
D
= 0
= 8 A,
C
=125 °C
GS
= 0
1500
Min.
Min.
3
3255
Typ.
Typ.
22.4
89.3
15.8
50.4
294
118
7.5
2.4
1.8
4
± 100
Max.
Max.
STW9N150
500
2.5
10
5
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
V
V
Ω
S
Ω