STW9N150 STMicroelectronics, STW9N150 Datasheet - Page 7

MOSFET N-CH 1500V 8A TO-247

STW9N150

Manufacturer Part Number
STW9N150
Description
MOSFET N-CH 1500V 8A TO-247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Type
Power MOSFETr
Datasheet

Specifications of STW9N150

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
1500V (1.5kV)
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
89.3nC @ 10V
Input Capacitance (ciss) @ Vds
3255pF @ 25V
Power - Max
320W
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
1.5kV
On Resistance Rds(on)
1.8ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
2.5 Ohm @ 10 V
Drain-source Breakdown Voltage
1500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
320 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
2.5Ohm
Drain-source On-volt
1.5kV
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8465-5

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STW9N150
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
10
(V)
GS
8
6
4
2
0
0
20
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
V
V
DD
I
GS
D
=1200V
=8A
=10V
40
60
80
100
HV41500
Qg (nC)
Figure 11. Normalized on resistance vs
Figure 13. Maximum avalanche energy vs
700
600
500
400
300
200
100
(mJ)
E
AS
0
0
25
Capacitance variations
temperature
temperature
50
Electrical characteristics
I
D
= 8A
75
100
125
HV41480
T
J
(˚C)
7/12

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