IXTH110N10L2 IXYS, IXTH110N10L2 Datasheet - Page 4

• Manufacturer Part Number: IXTH110N10L2
• Description: MOSFET N-CH 100V 110A TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH110N10L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 600W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 10500
• Qg, Typ, (nc): 260
• Trr, Typ, (ns): 230
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q5291125

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
320
280
240
200
160
120
200
180
160
140
120
100
100
80
40
80
60
40
20
0
0
0.3
3.0
0
f
0.4
3.5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
4.0
0.6
4.5
10
Fig. 7. Input Admittance
0.7
5.0
T
Fig. 11. Capacitance
J
= 125ºC
15
T
J
0.8
5.5
= 125ºC
V
V
- 40ºC
V
25ºC
SD
DS
GS
0.9
6.0
- Volts
20
- Volts
- Volts
1.0
6.5
T
J
= 25ºC
25
1.1
7.0
C rss
C iss
C oss
1.2
7.5
30
8.0
1.3
35
1.4
8.5
1.5
9.0
40
1.000
0.100
0.010
0.001
100
90
80
70
60
50
40
30
20
10
16
14
12
10
0.00001
0
8
6
4
2
0
0
0
V
I
I
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
20
= 55A
= 10mA
50
= 50V
0.0001
40
100
Fig. 8. Transconductance
60
0.001
Fig. 10. Gate Charge
150
Pulse Width - Seconds
Q
80
G
- NanoCoulombs
I
D
- Amperes
0.01
200
100
120
IXTH110N10L2
IXTT110N10L2
250
T
J
= - 40ºC
0.1
140
25ºC
300
125ºC
160
1
350
180
400
200
10