IXTH110N10L2 IXYS, IXTH110N10L2 Datasheet - Page 5

• Manufacturer Part Number: IXTH110N10L2
• Description: MOSFET N-CH 100V 110A TO-247
• Manufacturer: IXYS
• Series: Linear L2™r

Specifications of IXTH110N10L2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 10500pF @ 25V
• Power - Max: 600W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 10500
• Qg, Typ, (nc): 260
• Trr, Typ, (ns): 230
• Pd, (w): 600
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q5291125

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1,000
100
10
1
1
T
T
Single Pulse
J
C
= 150ºC
= 25ºC
Fig. 13. Forward-Bias Safe Operating Area
R
DS(on)
Limit
@ T
V
DS
C
10
- Volts
= 25ºC
100
25µs
100µs
1ms
10ms
100ms
DC
1,000
100
10
1
1
T
T
Single Pulse
J
C
= 150ºC
= 75ºC
Fig. 14. Forward-Bias Safe Operating Area
R
DS(on)
Limit
@ T
V
DS
C
10
- Volts
= 75ºC
IXTH110N10L2
IXTT110N10L2
IXYS REF: T_110N10L2(8R)01-22-10
100
25µs
100µs
1ms
10ms
100ms
DC