IXFR14N100Q2 IXYS, IXFR14N100Q2 Datasheet

MOSFET N-CH 1KV 9.5A ISOPLUS247

IXFR14N100Q2

Manufacturer Part Number
IXFR14N100Q2
Description
MOSFET N-CH 1KV 9.5A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFR14N100Q2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 7A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
9.5A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
83nC @ 10V
Input Capacitance (ciss) @ Vds
2700pF @ 25V
Power - Max
200W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9.5 A
Power Dissipation
200 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
9.5
Rds(on), Max, Tj=25°c, (?)
1.10
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
83
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
200
Rthjc, Max, (ºc/w)
0.62
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Electrically Isolated Tab
N-Channel Enhancement Mode
Avalanche Rated, Low Q
© 2004 IXYS All rights reserved
Low R
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
F
Weight
GSS
D25
DM
AR
DSS
J
JM
stg
L
C
GS(th)
DGR
GS
AR
D
ISOL
DSS
DS(on)
DSS
GSM
AS
g
, High dv/dt, Low t
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS, t = 1 min
I
Mounting Force
S
SOL
DS
GS
J
J
C
C
C
C
C
J
C
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 1mA, t = 1 s
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
TM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
D
D
DC
D
= 4 mA
= 250 µA
, V
= I
G
= 2 Ω
T
DS
rr
g
= 0
GS
= 1 MΩ
DD
T
T
(T
J
J
≤ V
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
Advanced Technical Data
JM
,
IXFR14N100Q2
1000
min.
3.0
Characteristic Values
-55 ... +150
-55 ... +150
20..120 / 4.6..27 N/lb
Maximum Ratings
typ.
1000
1000
2500
3000
±30
±40
200
150
300
9.5
2.5
56
14
50
20
5
max.
±200
0.90
5.0
25
1
V/ns
mA
mJ
nA
V~
V~
µA
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
J
ISOPLUS247 (IXFR)
G = Gate
E = Source
Features
Applications
Advantages
Double metal process for low gate
classification
Low R
Avalanche energy and current rated
Fast intrinsic rectifier
Pulse generation
Laser drivers
resistance
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Easy to mount
Space savings
High power density
Epoxy meet UL 94 V-0, flammability
V
I
R
t
D25
rr
E153432
DSS
DS(on)
≤ ≤ ≤ ≤ ≤ 300 ns
DS (on)
G
C
, low Q
E
=
=
=
g
C = Drain
ISOLATED TAB
1000 V
DS99229(11/04)
1.0 Ω Ω Ω Ω Ω
9.5 A

Related parts for IXFR14N100Q2

IXFR14N100Q2 Summary of contents

Page 1

... GSS DSS DS DSS DS(on Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2004 IXYS All rights reserved Advanced Technical Data IXFR14N100Q2 Maximum Ratings 1000 = 1 MΩ 1000 GS ±30 ±40 9 2.5 ≤ DSS 200 -55 ... +150 150 -55 ... +150 300 2500 3000 20 ...

Page 2

... Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 1.5 300 0.8 = 100 V R 0.7 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFR14N100Q2 ISOPLUS247 Outline K/W K µC A 6,404,065 B1 6,683,344 6,727,585 6,534,343 6,710,405B2 6,759,692 6,583,505 6,710,463 ...

Page 3

... Normalized to I DS(on) Value vs 2 Amperes D © 2004 IXYS All rights reserved 2 2 0.7 0 D25 D º º IXFR14N100Q2 Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I DS(on) D25 Junction Temperature -50 - Degrees Centigrade J Fig. 6. Drain Current vs. Case Temperature -50 - ...

Page 4

... V - Volts DS IXYS reserves the right to change limits, test conditions, and dimensions 6 º 0 iss C oss 0.1 0.1 C rss 0.01 0. IXFR14N100Q2 Fig. 8. Transconductance º - º º Amperes D Fig. 10. Gate Charge V = 500V 0mA nanoCoulombs G Fig. 12. Maximum Transient Thermal Fig. 12. Maximum Transient Thermal Resistance Resistance ...

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